Infineon Technologies AG IGBT Discretes IKW75N65ES5

Description
The 650 V, 75 A hard-switching TRENCHSTOP™ 5 S5 IGBT in a TO247 package addresses applications switching between 10 kHz and 40 kHz to deliver high efficiency, faster time-to-market cycles, circuit design complexity reduction and PCB bill of material cost optimization. Summary of Features Very low VCEsat of 1.35 V at 25°C, 20% lower than TRENCHSTOP™ 5 H5 4 times Ic pulse current (100°C Tc) Soft current fall characteristics with no tail current Symmetrical, low voltage overshoot Gate voltage under control (no oscillation). No risk of unwanted turn-on of device and no need for gate clamping Maximum junction temperature Tvj = 175°C Qualified according to JEDEC standards Benefits VCEpeak clamping circuits not required No need for gate clamping components Good EMI behaviour Excellent for paralleling Potential Applications Applications 1-phase string inverter solutions 48 V intermediate bus converter (IBC) Energy Storage Systems EV charging Designers who used this product also designed with IDWD20G120C5 | CoolSiC™ Schottky Diodes IMBG65R057M1H | Silicon Carbide MOSFET Discretes IDWD20G120C5 | CoolSiC™ Schottky Diodes IMBG65R057M1H | Silicon Carbide MOSFET Discretes IDWD20G120C5 | CoolSiC™ Schottky Diodes IMBG65R057M1H | Silicon Carbide MOSFET Discretes
  • IGBT Discretes - IKW75N65ES5 - Infineon Technologies AG
    Infineon Technologies AG
  • IGBTs - Single - IKW75N65ES5 - 825768-IKW75N65ES5 - Win Source Electronics
    Win Source Electronics
  • Transistors - IKW75N65ES5 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Transistor - 108060099 - Radwell International
    Radwell International
Request a Quote Datasheet
Description
The 650 V, 75 A hard-switching TRENCHSTOP™ 5 S5 IGBT in a TO247 package addresses applications switching between 10 kHz and 40 kHz to deliver high efficiency, faster time-to-market cycles, circuit design complexity reduction and PCB bill of material cost optimization. Summary of Features Very low VCEsat of 1.35 V at 25°C, 20% lower than TRENCHSTOP™ 5 H5 4 times Ic pulse current (100°C Tc) Soft current fall characteristics with no tail current Symmetrical, low voltage overshoot Gate voltage under control (no oscillation). No risk of unwanted turn-on of device and no need for gate clamping Maximum junction temperature Tvj = 175°C Qualified according to JEDEC standards Benefits VCEpeak clamping circuits not required No need for gate clamping components Good EMI behaviour Excellent for paralleling Potential Applications Applications 1-phase string inverter solutions 48 V intermediate bus converter (IBC) Energy Storage Systems EV charging Designers who used this product also designed with IDWD20G120C5 | CoolSiC™ Schottky Diodes IMBG65R057M1H | Silicon Carbide MOSFET Discretes IDWD20G120C5 | CoolSiC™ Schottky Diodes IMBG65R057M1H | Silicon Carbide MOSFET Discretes IDWD20G120C5 | CoolSiC™ Schottky Diodes IMBG65R057M1H | Silicon Carbide MOSFET Discretes
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
IGBT Discretes - IKW75N65ES5 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
IGBT Discretes
IKW75N65ES5
IGBT Discretes IKW75N65ES5
The 650 V, 75 A hard-switching TRENCHSTOP™ 5 S5 IGBT in a TO247 package addresses applications switching between 10 kHz and 40 kHz to deliver high efficiency, faster time-to-market cycles, circuit design complexity reduction and PCB bill of material cost optimization. Summary of Features Very low VCEsat of 1.35 V at 25°C, 20% lower than TRENCHSTOP™ 5 H5 4 times Ic pulse current (100°C Tc) Soft current fall characteristics with no tail current Symmetrical, low voltage overshoot Gate voltage under control (no oscillation). No risk of unwanted turn-on of device and no need for gate clamping Maximum junction temperature Tvj = 175°C Qualified according to JEDEC standards Benefits VCEpeak clamping circuits not required No need for gate clamping components Good EMI behaviour Excellent for paralleling Potential Applications Applications 1-phase string inverter solutions 48 V intermediate bus converter (IBC) Energy Storage Systems EV charging Designers who used this product also designed with IDWD20G120C5 | CoolSiC™ Schottky Diodes IMBG65R057M1H | Silicon Carbide MOSFET Discretes IDWD20G120C5 | CoolSiC™ Schottky Diodes IMBG65R057M1H | Silicon Carbide MOSFET Discretes IDWD20G120C5 | CoolSiC™ Schottky Diodes IMBG65R057M1H | Silicon Carbide MOSFET Discretes

The 650 V, 75 A hard-switching TRENCHSTOP™ 5 S5 IGBT in a TO247 package addresses applications switching between 10 kHz and 40 kHz to deliver high efficiency, faster time-to-market cycles, circuit design complexity reduction and PCB bill of material cost optimization.


Summary of Features

  • Very low VCEsat of 1.35 V at 25°C, 20% lower than TRENCHSTOP™ 5 H5
  • 4 times Ic pulse current (100°C Tc)
  • Soft current fall characteristics with no tail current
  • Symmetrical, low voltage overshoot
  • Gate voltage under control (no oscillation). No risk of unwanted turn-on of device and no need for gate clamping
  • Maximum junction temperature Tvj = 175°C
  • Qualified according to JEDEC standards

Benefits

  • VCEpeak clamping circuits not required
  • No need for gate clamping components
  • Good EMI behaviour
  • Excellent for paralleling

Potential Applications


Applications

  • 1-phase string inverter solutions
  • 48 V intermediate bus converter (IBC)
  • Energy Storage Systems
  • EV charging

Designers who used this product also designed with


  • IDWD20G120C5 |
    CoolSiC™ Schottky Diodes
  • IMBG65R057M1H |
    Silicon Carbide MOSFET Discretes
  • IDWD20G120C5 |
    CoolSiC™ Schottky Diodes
  • IMBG65R057M1H |
    Silicon Carbide MOSFET Discretes
  • IDWD20G120C5 |
    CoolSiC™ Schottky Diodes
  • IMBG65R057M1H |
    Silicon Carbide MOSFET Discretes
Supplier's Site Datasheet
IGBTs - Single - IKW75N65ES5 - 825768-IKW75N65ES5 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - IKW75N65ES5
825768-IKW75N65ES5
IGBTs - Single - IKW75N65ES5 825768-IKW75N65ES5
Manufacturer: Infineon Technologies Win Source Part Number: 825768-IKW75N65ES5 Categories: Uncategorized Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 825768-IKW75N65ES5
Categories: Uncategorized
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Limited

Buy Now
Transistors - IKW75N65ES5 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
IKW75N65ES5
Transistors IKW75N65ES5
IGBT Transistors Trenchstop 5 IGBT

IGBT Transistors Trenchstop 5 IGBT

Supplier's Site Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
IGBT Transistor
279-IKW75N65ES5
IGBT Transistor 279-IKW75N65ES5
IGBTs Trenchstop 5 IGBT Product overview: IKW75N65ES5 from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IKW75N65ES5 can be used for catalog matching and distributor lookup.

IGBTs Trenchstop 5 IGBT Product overview: IKW75N65ES5 from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IKW75N65ES5 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Transistor - 108060099 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
108060099
Transistor 108060099
INSULATED GATE BIPOLAR TRANSISTOR, 80A I(C), 650V V(BR)CES, N-CHANNEL, TO-247. FREE 2 YEAR RADWELL WARRANTY

INSULATED GATE BIPOLAR TRANSISTOR, 80A I(C), 650V V(BR)CES, N-CHANNEL, TO-247. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
LCSC Electronics Technology (HK) Limited
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> IGBTs
IKW75N65ES5
Triode/MOS Tube/Transistor >> IGBTs IKW75N65ES5
TO-247-3 IGBTs ROHS

TO-247-3 IGBTs ROHS

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
IGBT Transistors
IKW75N65ES5
IGBT Transistors IKW75N65ES5
IGBT Transistors Trenchstop 5 IGBT

IGBT Transistors Trenchstop 5 IGBT

Buy Now Datasheet

Technical Specifications

  Infineon Technologies AG Win Source Electronics ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Radwell International LCSC Electronics Technology (HK) Limited VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Transistors Insulated Gate Bipolar Transistors (IGBT) RF Transistors Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number IKW75N65ES5 825768-IKW75N65ES5 IKW75N65ES5 279-IKW75N65ES5 108060099 IKW75N65ES5 IKW75N65ES5
Product Name IGBT Discretes IGBTs - Single - IKW75N65ES5 Transistors IGBT Transistor Transistor Triode/MOS Tube/Transistor >> IGBTs IGBT Transistors
VCE(on) 650 volts
Switching Speed 10 to 30 kHz
tr 46 ns
tf 41 ns
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