Infineon Technologies AG Single IGBTs IKP01N120H2XKSA1

Description
IGBT 1200V 3.2A 28W Through Hole PG-TO220-3-1
Request a Quote Datasheet
Description
IGBT 1200V 3.2A 28W Through Hole PG-TO220-3-1
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single IGBTs - IKP01N120H2XKSA1-ND - DigiKey
Thief River Falls, MN, United States
IGBT 1200V 3.2A 28W Through Hole PG-TO220-3-1

IGBT 1200V 3.2A 28W Through Hole PG-TO220-3-1

Buy Now Datasheet
Singapore, Singapore
1200V 3.2A 28W TO220 IGBT Transistor
279-IKP01N120H2XKSA1
1200V 3.2A 28W TO220 IGBT Transistor 279-IKP01N120H2XKSA1
IGBT 1200V 3.2A 28W TO220-3 Product overview: IKP01N120H2XKSA1 from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 3.2A, 28W, TO220. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 3.2A, 28W, TO220. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IKP01N120H2XKSA1 can be used for catalog matching and distributor lookup.

IGBT 1200V 3.2A 28W TO220-3 Product overview: IKP01N120H2XKSA1 from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 3.2A, 28W, TO220. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 3.2A, 28W, TO220. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IKP01N120H2XKSA1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
IGBTs - Single - IKP01N120H2XKSA1 - 1045274-IKP01N120H2XKSA1 - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - IKP01N120H2XKSA1
1045274-IKP01N120H2XKSA1
IGBTs - Single - IKP01N120H2XKSA1 1045274-IKP01N120H2XKSA1
Manufacturer: Infineon Technologies Win Source Part Number: 1045274-IKP01N120H2X KSA1 Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 83ns Input Type: Standard Gate Charge: 8.6nC Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -40°C to 150°C (TJ) Case / Package: PG-TO220-3 Maximum Current Collector: 3.2A VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V Maximum Power Dissipation: 28W Pulsed Collector Current: 3.5A Collector-emitter saturation voltage(Max): 2.8V @ 15V, 1A Total Switching Energy(Ets): 140μJ Turn-on and Turn-off delay time: 13ns/370ns Testing Conditions: 800V, 1A, 241 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Sufficient Application Field: Used in Consumer Electronics, Portable Devices, Power Management, Industrial

Manufacturer: Infineon Technologies
Win Source Part Number: 1045274-IKP01N120H2XKSA1
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 83ns
Input Type: Standard
Gate Charge: 8.6nC
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -40°C to 150°C (TJ)
Case / Package: PG-TO220-3
Maximum Current Collector: 3.2A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
Maximum Power Dissipation: 28W
Pulsed Collector Current: 3.5A
Collector-emitter saturation voltage(Max): 2.8V @ 15V, 1A
Total Switching Energy(Ets): 140μJ
Turn-on and Turn-off delay time: 13ns/370ns
Testing Conditions: 800V, 1A, 241 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Consumer Electronics, Portable Devices, Power Management, Industrial

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - IKP01N120H2XKSA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
IKP01N120H2XKSA1
Discrete Semiconductor Products - Transistors - IGBTs IKP01N120H2XKSA1
IGBT 1200V 3.2A 28W TO220-3

IGBT 1200V 3.2A 28W TO220-3

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number IKP01N120H2XKSA1-ND 279-IKP01N120H2XKSA1 1045274-IKP01N120H2XKSA1 IKP01N120H2XKSA1
Product Name Single IGBTs 1200V 3.2A 28W TO220 IGBT Transistor IGBTs - Single - IKP01N120H2XKSA1 Discrete Semiconductor Products - Transistors - IGBTs
TJ -40 to 150 C (-40 to 302 F) -40 to 150 C (-40 to 302 F) -40 to 150 C (-40 to 302 F) -40 to 150 C (-40 to 302 F)
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