Infineon Technologies AG IGBT Discretes IKA15N60T

Description
600 V, 15 A IGBT with anti-parallel diode in TO-220 Full-Pak package Hard-switching 600 V, 15 A TRENCHSTOP™ IGBT3 Discrete copacked with full-rated external free-wheeling diode in a TO-220 Full-Pak package, leads to significant improvement of static as well as dynamic performance of the device, due to the combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. Summary of Features Very low VCEsat 1.5 V (typ.) Low switching losses Easy parallel switching capability due to positive temperature coefficient in VCEsat Very soft, fast recovery anti-parallel Emitter Controlled diode High ruggedness, temperature stable behavior Low EMI emissions Low gate charge Very tight parameter distribution Benefits Highest efficiency – low conduction and switching losses Comprehensive portfolio in 600V for flexibility of design High device reliability Applications Photovoltaic Residential air conditioning: Smart (IoT) and efficient cooling
  • IGBT Discretes - IKA15N60T - Infineon Technologies AG
    Infineon Technologies AG
  • IGBTs - Single - IKA15N60T - 1185348-IKA15N60T - Win Source Electronics
    Win Source Electronics
  • Transistors - IKA15N60T - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Transistor - 221970508 - Radwell International
    Radwell International
Request a Quote Datasheet
Description
600 V, 15 A IGBT with anti-parallel diode in TO-220 Full-Pak package Hard-switching 600 V, 15 A TRENCHSTOP™ IGBT3 Discrete copacked with full-rated external free-wheeling diode in a TO-220 Full-Pak package, leads to significant improvement of static as well as dynamic performance of the device, due to the combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. Summary of Features Very low VCEsat 1.5 V (typ.) Low switching losses Easy parallel switching capability due to positive temperature coefficient in VCEsat Very soft, fast recovery anti-parallel Emitter Controlled diode High ruggedness, temperature stable behavior Low EMI emissions Low gate charge Very tight parameter distribution Benefits Highest efficiency – low conduction and switching losses Comprehensive portfolio in 600V for flexibility of design High device reliability Applications Photovoltaic Residential air conditioning: Smart (IoT) and efficient cooling
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
IGBT Discretes - IKA15N60T - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
IGBT Discretes
IKA15N60T
IGBT Discretes IKA15N60T
600 V, 15 A IGBT with anti-parallel diode in TO-220 Full-Pak package Hard-switching 600 V, 15 A TRENCHSTOP™ IGBT3 Discrete copacked with full-rated external free-wheeling diode in a TO-220 Full-Pak package, leads to significant improvement of static as well as dynamic performance of the device, due to the combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. Summary of Features Very low VCEsat 1.5 V (typ.) Low switching losses Easy parallel switching capability due to positive temperature coefficient in VCEsat Very soft, fast recovery anti-parallel Emitter Controlled diode High ruggedness, temperature stable behavior Low EMI emissions Low gate charge Very tight parameter distribution Benefits Highest efficiency – low conduction and switching losses Comprehensive portfolio in 600V for flexibility of design High device reliability Applications Photovoltaic Residential air conditioning: Smart (IoT) and efficient cooling

600 V, 15 A IGBT with anti-parallel diode in TO-220 Full-Pak package

Hard-switching 600 V, 15 A TRENCHSTOP™ IGBT3 Discrete copacked with full-rated external free-wheeling diode in a TO-220 Full-Pak package, leads to significant improvement of static as well as dynamic performance of the device, due to the combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.


Summary of Features

  • Very low VCEsat 1.5 V (typ.)
  • Low switching losses
  • Easy parallel switching capability due to positive temperature coefficient in VCEsat
  • Very soft, fast recovery anti-parallel Emitter Controlled diode
  • High ruggedness, temperature stable behavior
  • Low EMI emissions
  • Low gate charge
  • Very tight parameter distribution

Benefits

  • Highest efficiency – low conduction and switching losses
  • Comprehensive portfolio in 600V for flexibility of design
  • High device reliability

Applications

  • Photovoltaic
  • Residential air conditioning: Smart (IoT) and efficient cooling
Supplier's Site Datasheet
IGBTs - Single - IKA15N60T - 1185348-IKA15N60T - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - IKA15N60T
1185348-IKA15N60T
IGBTs - Single - IKA15N60T 1185348-IKA15N60T
Manufacturer: Infineon Technologies Win Source Part Number: 1185348-IKA15N60T Manufacturer Homepage: www.infineon.com Alternative Parts (Cross-Reference): STGF19NC60HD; IKA15N60TXK; FGPF7N60LSD; Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Sufficient

Manufacturer: Infineon Technologies
Win Source Part Number: 1185348-IKA15N60T
Manufacturer Homepage: www.infineon.com
Alternative Parts (Cross-Reference): STGF19NC60HD; IKA15N60TXK; FGPF7N60LSD;
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Sufficient

Buy Now
Transistors - IKA15N60T - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
IKA15N60T
Transistors IKA15N60T
TO-220 IGBT Transistors / Modules ROHS

TO-220 IGBT Transistors / Modules ROHS

Supplier's Site
ERSAELECTRONICS PTE. LTD.
Singapore
600V 15A IGBT Transistor
279-IKA15N60T
600V 15A IGBT Transistor 279-IKA15N60T
IGBTs LOW LOSS DuoPack 600V 15A Product overview: IKA15N60T from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 15A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 15A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IKA15N60T can be used for catalog matching and distributor lookup.

IGBTs LOW LOSS DuoPack 600V 15A Product overview: IKA15N60T from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 15A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 15A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IKA15N60T can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Transistor - 221970508 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
221970508
Transistor 221970508
INSULATED GATE BIPOLAR TRANSISTOR, 14.7A I(C), 600V V(BR)CES, N-CHANNEL, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

INSULATED GATE BIPOLAR TRANSISTOR, 14.7A I(C), 600V V(BR)CES, N-CHANNEL, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
IGBT Transistors
IKA15N60T
IGBT Transistors IKA15N60T
IGBT Transistors LOW LOSS DuoPack 600V 15A

IGBT Transistors LOW LOSS DuoPack 600V 15A

Buy Now Datasheet

Technical Specifications

  Infineon Technologies AG Win Source Electronics ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Radwell International VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Transistors Insulated Gate Bipolar Transistors (IGBT) RF Transistors Insulated Gate Bipolar Transistors (IGBT)
Product Number IKA15N60T 1185348-IKA15N60T IKA15N60T 279-IKA15N60T 221970508 IKA15N60T
Product Name IGBT Discretes IGBTs - Single - IKA15N60T Transistors 600V 15A IGBT Transistor Transistor IGBT Transistors
VCE(on) 600 volts
Switching Speed 2 to 20 kHz
tr 11 ns
tf 50 ns
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