Manufacturer: Infineon Technologies
Win Source Part Number: 125022-IKD04N60RATMA
Packaging: Reel - TR
Mounting: SMD (SMT)
Reverse Recovery Time (trr): 43ns
IGBT Type: Trench Field Stop
Input Type: Standard
Gate Charge: 27nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -40°C to 175°C (TJ)
Case / Package: PG-TO252-3
Maximum Current Collector: 8A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 75W
Pulsed Collector Current: 12A
Collector-emitter saturation voltage(Max): 2.1V @ 15V, 4A
Total Switching Energy(Ets): 90μJ (on), 150μJ (off)
Turn-on and Turn-off delay time: 14ns/146ns
Testing Conditions: 400V, 4A, 43 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Balance
IGBT TRENCH/FS 600V 8A TO252-3 Product overview: IKD04N60RATMA1 from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 8A, TO252. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 8A, TO252. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IKD04N60RATMA1 can be used for catalog matching and distributor lookup.
IGBT Trench Field Stop 600V 8A 75W Surface Mount PG-TO252-3
IGBT Trench Field Stop 600V 8A 75W Surface Mount PG-TO252-3
IGBT Trench Field Stop 600V 8A 75W Surface Mount PG-TO252-3
IGBT TRENCH/FS 600V 8A TO252-3
IGBT Transistors IGBT w/ INTG DIODE 600V 8A
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 125022-IKD04N60RATMA1 | 279-IKD04N60RATMA1 | IKD04N60RATMA1CT-ND | IKD04N60RATMA1DKR-ND | IKD04N60RATMA1 | IKD04N60RATMA1 |
| Product Name | IGBTs - Single - IKD04N60RATMA1 | 600V 8A TO252 IGBT Transistor | Single IGBTs | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs | IGBT Transistors |
| VCE(on) | 2.1 volts | |||||
| PD | 75000 milliwatts | 75 milliwatts | ||||
| TJ | -40 to 175 C (-40 to 347 F) | -40 to 175 C (-40 to 347 F) | -40 to 175 C (-40 to 347 F) | -40 to 175 C (-40 to 347 F) |
