Lingto Electronic Limited Datasheets for DRAM and SDRAM Memory Chips
Dynamic random access memory (DRAM) chips are single-transistor memory cells that use small capacitors to store each bit of memory in an addressable format that consists of rows and columns. Because capacitors are unable to hold a charge indefinitely, DRAM memory chips require a near-constant pulse of current to retain stored information.
DRAM and SDRAM Memory Chips: Learn more
| Product Name | Notes |
|---|---|
| IC DRAM 128MBIT PARALLEL 60VFBGA | |
| IC DRAM 128MBIT PARALLEL 66TSOP | |
| IC DRAM 128MBIT PARALLEL 90VFBGA | |
| IC DRAM 1GBIT PARALLEL 152VFBGA | |
| IC DRAM 1GBIT PARALLEL 168VFBGA | |
| IC DRAM 1GBIT PARALLEL 168WFBGA | |
| IC DRAM 1GBIT PARALLEL 60VFBGA | |
| IC DRAM 1GBIT PARALLEL 66TSOP | |
| IC DRAM 1GBIT PARALLEL 90VFBGA | |
| IC DRAM 256MBIT PAR 66TSOP II | |
| IC DRAM 256MBIT PARALLEL 60FBGA | |
| IC DRAM 256MBIT PARALLEL 60VFBGA | |
| IC DRAM 256MBIT PARALLEL 66TSOP | |
| IC DRAM 256MBIT PARALLEL 90VFBGA | |
| IC DRAM 2GBIT PARALLEL 152VFBGA | |
| IC DRAM 2GBIT PARALLEL 168VFBGA | |
| IC DRAM 2GBIT PARALLEL 168WFBGA | |
| IC DRAM 2GBIT PARALLEL 60VFBGA | |
| IC DRAM 2GBIT PARALLEL 90VFBGA | |
| IC DRAM 4GBIT PARALLEL 168WFBGA | |
| IC DRAM 4GBIT PARALLEL 240WFBGA | |
| IC DRAM 512M PARALLEL | |
| IC DRAM 512MBIT PAR 152VFBGA | |
| IC DRAM 512MBIT PARALLEL 60FBGA | |
| IC DRAM 512MBIT PARALLEL 60VFBGA | |
| IC DRAM 512MBIT PARALLEL 66TSOP | |
| IC DRAM 512MBIT PARALLEL 90VFBGA | |
| IC DRAM 576MBIT PARALLEL 168BGA | |
| IC DRAM 8GBIT PARALLEL 168TFBGA | |
| IC DRAM 8GBIT PARALLEL 168VFBGA | |
| IC RLDRAM 1.125GBIT PAR 168BGA | |
| IC RLDRAM 1.125GBIT PAR 800MHZ | |
| IC RLDRAM 1.125GBIT TBGA | |
| IC SDRAM DDR 256MB 66TSOP | |
| IC SDRAM MOBILE DDR 512M | |
| MOBILE DDR 1G DIE 32MX32 | |
| MOBILE DDR 1G DIE 64MX16 | |
| MOBILE DDR 2G DIE 64MX32 |
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