Micron Technology, Inc. Memory MT46H64M16LFCK-5 IT:A

Description
SDRAM - Mobile LPDDR Memory IC 1Gb (64M x 16) Parallel 200MHz 5ns 60-VFBGA (10x11.5)
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Description
SDRAM - Mobile LPDDR Memory IC 1Gb (64M x 16) Parallel 200MHz 5ns 60-VFBGA (10x11.5)
Request a Quote
Datasheet
Datasheet Summary
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The MT46H64M16LFCK-5 IT:A is a Mobile Low-Power DDR SDRAM memory chip with a configuration of 16 Meg x 16 across 4 banks, providing a total capacity of 1 Gbit. It operates at a voltage range of 1.70 to 1.95V and features a differential clock input with commands entered on each positive clock edge. The device supports a pipelined double data rate architecture, allowing for two data accesses per clock cycle, and includes bidirectional data strobes for each byte of data. This memory chip is designed for low power consumption, with options for deep power-down and self-refresh modes. It features programmable burst lengths of 2, 4, 8, or 16, and supports concurrent auto precharge. The device is available in a 60-ball VFBGA package measuring 10mm x 11.5mm and is rated for industrial temperature ranges from -40¬8C to +85¬8C. The specified cycle time is 5ns at a CAS latency of 3, making it suitable for applications requiring efficient memory performance in mobile devices.

Datasheet Summary
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The MT46H64M16LFCK-5 IT:A is a Mobile Low-Power DDR SDRAM memory chip with a configuration of 16 Meg x 16 across 4 banks, providing a total capacity of 1 Gbit. It operates at a voltage range of 1.70 to 1.95V and features a differential clock input with commands entered on each positive clock edge. The device supports a pipelined double data rate architecture, allowing for two data accesses per clock cycle, and includes bidirectional data strobes for each byte of data. This memory chip is designed for low power consumption, with options for deep power-down and self-refresh modes. It features programmable burst lengths of 2, 4, 8, or 16, and supports concurrent auto precharge. The device is available in a 60-ball VFBGA package measuring 10mm x 11.5mm and is rated for industrial temperature ranges from -40¬8C to +85¬8C. The specified cycle time is 5ns at a CAS latency of 3, making it suitable for applications requiring efficient memory performance in mobile devices.

Suppliers

Company
Product
Description
Supplier Links
Memory - MT46H64M16LFCK-5IT:A-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - Mobile LPDDR Memory IC 1Gb (64M x 16) Parallel 200MHz 5ns 60-VFBGA (10x11.5)

SDRAM - Mobile LPDDR Memory IC 1Gb (64M x 16) Parallel 200MHz 5ns 60-VFBGA (10x11.5)

Buy Now Datasheet
IC DRAM 1GBIT PARALLEL 60VFBGA

IC DRAM 1GBIT PARALLEL 60VFBGA

Supplier's Site Datasheet
SDRAM - Mobile LPDDR Memory IC 1Gbit Parallel 200 MHz 5 ns 60-VFBGA (10x11.5)

SDRAM - Mobile LPDDR Memory IC 1Gbit Parallel 200 MHz 5 ns 60-VFBGA (10x11.5)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - MT46H64M16LFCK-5 IT:A - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT46H64M16LFCK-5 IT:A
Integrated Circuits (ICs) - Memory - Memory MT46H64M16LFCK-5 IT:A
IC DRAM 1GBIT PARALLEL 60VFBGA

IC DRAM 1GBIT PARALLEL 60VFBGA

Supplier's Site

Technical Specifications

  DigiKey Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number MT46H64M16LFCK-5IT:A-ND MT46H64M16LFCK-5 IT:A MT46H64M16LFCK-5 IT:A MT46H64M16LFCK-5 IT:A
Product Name Memory Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Package Type 60-VFBGA BGA; 60-VFBGA BGA
Supply Voltage 1.7V ~ 1.95V 1.7V ~ 1.95V -40degC ~ 85degC (TA)
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