Micron Technology, Inc. Memory MT46V16M16CY-5B:M

Description
IC DRAM 256MBIT PARALLEL 60FBGA
Request a Quote Datasheet
Description
IC DRAM 256MBIT PARALLEL 60FBGA
Request a Quote Datasheet

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IC DRAM 256MBIT PARALLEL 60FBGA

IC DRAM 256MBIT PARALLEL 60FBGA

Supplier's Site Datasheet
Memory IC and Storage Component - 774-MT46V16M16CY-5B:M - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-MT46V16M16CY-5B:M
Memory IC and Storage Component 774-MT46V16M16CY-5B:M
IC DRAM 256MBIT PARALLEL 60FBGA Product overview: MT46V16M16CY-5B:M from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT46V16M16CY-5B: M can be used for catalog matching and distributor lookup.

IC DRAM 256MBIT PARALLEL 60FBGA Product overview: MT46V16M16CY-5B:M from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT46V16M16CY-5B:M can be used for catalog matching and distributor lookup.

Supplier's Site
Memory - SDRAM - MT46V16M16CY-5B:M -  - Win Source Electronics
Laguna Hills, CA, United States
Memory - SDRAM - MT46V16M16CY-5B:M
Memory - SDRAM - MT46V16M16CY-5B:M
Manufacturer: Micron Technology Inc. Packaging: Bulk Operating Temperature Range: 0°C ~ 70°C (TA) Package: 60-TFBGA Mounting: SMD Technology: SDRAM - DDR Operating Supply Voltage: 2.5 V ~ 2.7 V Memory Type: Volatile Memory Size: 256Mb (16M x 16) Access Time: 700ps Family Name: MT46V16M16 Categories: Integrated Circuits (ICs) Memory Format: DRAM Manufacturer Homepage: www.micron.com Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Manufacturer Package: 60-FBGA (8x12.5) Alternative Parts (Cross-Reference): K4H561638J-HCCC; K4H561638J-HICC; K4H561638J-HCCC000; Introduction Date: March 06, 2000 ECCN: EAR99 Country of Origin: United States of America Estimated EOL Date: End of life (Obsolete) Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Balance

Manufacturer: Micron Technology Inc.
Packaging: Bulk
Operating Temperature Range: 0°C ~ 70°C (TA)
Package: 60-TFBGA
Mounting: SMD
Technology: SDRAM - DDR
Operating Supply Voltage: 2.5 V ~ 2.7 V
Memory Type: Volatile
Memory Size: 256Mb (16M x 16)
Access Time: 700ps
Family Name: MT46V16M16
Categories: Integrated Circuits (ICs)
Memory Format: DRAM
Manufacturer Homepage: www.micron.com
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Manufacturer Package: 60-FBGA (8x12.5)
Alternative Parts (Cross-Reference): K4H561638J-HCCC; K4H561638J-HICC; K4H561638J-HCCC000;
Introduction Date: March 06, 2000
ECCN: EAR99
Country of Origin: United States of America
Estimated EOL Date: End of life (Obsolete)
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Memory - MT46V16M16CY-5B:M-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - DDR Memory IC 256Mb (16M x 16) Parallel 200MHz 700ps 60-FBGA (8x12.5)

SDRAM - DDR Memory IC 256Mb (16M x 16) Parallel 200MHz 700ps 60-FBGA (8x12.5)

Buy Now Datasheet
IC DRAM 256MBIT PARALLEL 60FBGA

IC DRAM 256MBIT PARALLEL 60FBGA

Supplier's Site Datasheet
Memory - MT46V16M16CY-5B:M - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR Memory IC 256Mbit Parallel 200 MHz 700 ps 60-FBGA (8x12.5)

SDRAM - DDR Memory IC 256Mbit Parallel 200 MHz 700 ps 60-FBGA (8x12.5)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - MT46V16M16CY-5B:M - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT46V16M16CY-5B:M
Integrated Circuits (ICs) - Memory - Memory MT46V16M16CY-5B:M
IC DRAM 256MBIT PARALLEL 60FBGA

IC DRAM 256MBIT PARALLEL 60FBGA

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Win Source Electronics DigiKey Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number MT46V16M16CY-5B:M 774-MT46V16M16CY-5B:M MT46V16M16CY-5B:M-ND MT46V16M16CY-5B:M MT46V16M16CY-5B:M MT46V16M16CY-5B:M
Product Name Memory Memory IC and Storage Component Memory - SDRAM - MT46V16M16CY-5B:M Memory Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SDRAM - DDR; DRAM Chip Volatile; DRAM Chip Volatile; DRAM Chip DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Data Rate 200 MHz 200 MHz
Access Time 0.7000 ns 0.7000 ns 0.7000 ns 0.7000 ns 0.7000 ns
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
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