IC DRAM 512MBIT PARALLEL 90VFBGA
SDRAM - Mobile LPDDR Memory IC 512Mbit Parallel 200 MHz 5 ns 90-VFBGA (8x13)
IC DRAM 512MBIT PAR 90VFBGA
| Lingto Electronic Limited | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips |
| Product Number | MT46H16M32LFBQ-5 AIT:C | MT46H16M32LFBQ-5 AIT:C | MT46H16M32LFBQ-5 AIT:C |
| Product Name | Memory | Memory | Integrated Circuits (ICs) - Memory - Memory |
| Memory Category | DRAM; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip |
| Access Time | 5 ns | 5 ns | |
| Density | 512000 kbits | 512000 kbits | 512000 kbits |
| Operating Temperature | -40 to 85 C (-40 to 185 F) |
