The MT44K32M18RB-107E:A is a 576Mbit RLDRAM 3 memory device from Quarktwin Technology Ltd. It operates at a clock frequency of 1066 MHz, providing a data rate of 2133 Mb/s per ball and a peak bandwidth of 76.8 Gb/s when configured as x36. The memory features a 32 Meg x 18 organization with 16 banks and supports a reduced cycle time with a minimum tRC of 10 ns. It operates at multiple voltage levels, including 1.35V for VDD and 1.2V for VDDQ I/O, and includes integrated on-die termination (ODT). The device is packaged in a 168-ball FBGA format and offers programmable read/write latency and burst length options. It also supports differential input clocks and has a refresh rate of 64ms. This memory component is suitable for applications requiring high-speed data processing and efficient power management.
DRAM Memory IC 576Mb (32M x 18) Parallel 933MHz 8ns 168-BGA (13.5x13.5)
IC DRAM 576MBIT PAR 168BGA
DRAM Memory IC 576Mbit Parallel 933 MHz 8 ns 168-BGA (13.5x13.5)
IC DRAM 576MBIT PARALLEL 168BGA
| DigiKey | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | Lingto Electronic Limited | |
|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | MT44K32M18RB-107E:A-ND | MT44K32M18RB-107E:A | MT44K32M18RB-107E:A | MT44K32M18RB-107E:A |
| Product Name | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory | Memory |
| Memory Category | DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip |
| Operating Temperature | 0 to 95 C (32 to 203 F) | 0 to 95 C (32 to 203 F) | ||
| Density | 576000 kbits | 576000 kbits | 576000 kbits | 576000 kbits |
| Package Type | 168-TBGA | BGA | BGA; 168-TBGA |
