Micron Technology, Inc. Memory MT46H8M16LFBF-5:K

Description
SDRAM - Mobile LPDDR Memory IC 128Mbit Parallel 200 MHz 5 ns 60-VFBGA (8x9)
Datasheet
Description
SDRAM - Mobile LPDDR Memory IC 128Mbit Parallel 200 MHz 5 ns 60-VFBGA (8x9)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MT46H8M16LFBF-5:K - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPDDR Memory IC 128Mbit Parallel 200 MHz 5 ns 60-VFBGA (8x9)

SDRAM - Mobile LPDDR Memory IC 128Mbit Parallel 200 MHz 5 ns 60-VFBGA (8x9)

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IC DRAM 128MBIT PARALLEL 60VFBGA

IC DRAM 128MBIT PARALLEL 60VFBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - MT46H8M16LFBF-5:K - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT46H8M16LFBF-5:K
Integrated Circuits (ICs) - Memory - Memory MT46H8M16LFBF-5:K
IC DRAM 128MBIT PAR 60VFBGA

IC DRAM 128MBIT PAR 60VFBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT46H8M16LFBF-5:K MT46H8M16LFBF-5:K MT46H8M16LFBF-5:K
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 5 ns 5 ns
Operating Temperature 0 to 70 C (32 to 158 F)
Density 128000 kbits 128000 kbits 128000 kbits
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