Micron Technology, Inc. Memory MT46H8M16LFBF-5:K

Description
SDRAM - Mobile LPDDR Memory IC 128Mbit Parallel 200 MHz 5 ns 60-VFBGA (8x9)
Datasheet
Description
SDRAM - Mobile LPDDR Memory IC 128Mbit Parallel 200 MHz 5 ns 60-VFBGA (8x9)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MT46H8M16LFBF-5:K - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPDDR Memory IC 128Mbit Parallel 200 MHz 5 ns 60-VFBGA (8x9)

SDRAM - Mobile LPDDR Memory IC 128Mbit Parallel 200 MHz 5 ns 60-VFBGA (8x9)

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Integrated Circuits (ICs) - Memory - Memory - MT46H8M16LFBF-5:K - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT46H8M16LFBF-5:K
Integrated Circuits (ICs) - Memory - Memory MT46H8M16LFBF-5:K
IC DRAM 128MBIT PAR 60VFBGA

IC DRAM 128MBIT PAR 60VFBGA

Supplier's Site
IC DRAM 128MBIT PARALLEL 60VFBGA

IC DRAM 128MBIT PARALLEL 60VFBGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT46H8M16LFBF-5:K MT46H8M16LFBF-5:K MT46H8M16LFBF-5:K
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Access Time 5 ns 5 ns
Operating Temperature 0 to 70 C (32 to 158 F)
Density 128000 kbits 128000 kbits 128000 kbits
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