Micron Technology, Inc. Memory MT46H8M16LFBF-5:K

Description
IC DRAM 128MBIT PARALLEL 60VFBGA
Datasheet
Description
IC DRAM 128MBIT PARALLEL 60VFBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
IC DRAM 128MBIT PARALLEL 60VFBGA

IC DRAM 128MBIT PARALLEL 60VFBGA

Supplier's Site Datasheet
Memory - MT46H8M16LFBF-5:K - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPDDR Memory IC 128Mbit Parallel 200 MHz 5 ns 60-VFBGA (8x9)

SDRAM - Mobile LPDDR Memory IC 128Mbit Parallel 200 MHz 5 ns 60-VFBGA (8x9)

Buy Now
Integrated Circuits (ICs) - Memory - Memory - MT46H8M16LFBF-5:K - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT46H8M16LFBF-5:K
Integrated Circuits (ICs) - Memory - Memory MT46H8M16LFBF-5:K
IC DRAM 128MBIT PAR 60VFBGA

IC DRAM 128MBIT PAR 60VFBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT46H8M16LFBF-5:K MT46H8M16LFBF-5:K MT46H8M16LFBF-5:K
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 5 ns 5 ns
Density 128000 kbits 128000 kbits 128000 kbits
Operating Temperature 0 to 70 C (32 to 158 F)
Unlock Full Specs
to access all available technical data

Similar Products

Memory - JBP28L42MJ - Quarktwin Technology Ltd.
Texas Instruments
Specs
Memory Category PROM; PROM
Access Time 110 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
2 suppliers
Flash Memory - 1882864P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Density 1024000 kbits
Package Type WSON
View Details
Memory - SMJ44400 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 80 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details