Micron Technology, Inc. Memory - DDR - MT46V32M16CV-5B IT:J MT46V32M16CV-5B IT:J

Description
Series: * Categories: Memory
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Description
Series: * Categories: Memory
Request a Quote
Datasheet
Datasheet Summary
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The MT46V32M16CV-5B IT:J is a 512Mb DDR SDRAM memory chip featuring a configuration of 8 Meg x 16 with four internal banks for concurrent operation. It operates at a voltage of 2.5V ¬±0.2V and supports a clock rate of up to 200 MHz with a CAS latency of 3. The device is designed for high-speed data transfer, utilizing a double-data-rate architecture that allows for two data accesses per clock cycle. It includes features such as bidirectional data strobe (DQS), programmable burst lengths of 2, 4, or 8, and an auto-refresh capability with a 64ms, 8192-cycle refresh count. The memory is available in a 60-ball FBGA package, which is compact and suitable for space-constrained applications. Additionally, it supports a low-power self-refresh mode and is rated for industrial temperature ranges from -40¬8C to +85¬8C, making it suitable for a variety of applications requiring reliable performance under challenging conditions.

Datasheet Summary
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The MT46V32M16CV-5B IT:J is a 512Mb DDR SDRAM memory chip featuring a configuration of 8 Meg x 16 with four internal banks for concurrent operation. It operates at a voltage of 2.5V ¬±0.2V and supports a clock rate of up to 200 MHz with a CAS latency of 3. The device is designed for high-speed data transfer, utilizing a double-data-rate architecture that allows for two data accesses per clock cycle. It includes features such as bidirectional data strobe (DQS), programmable burst lengths of 2, 4, or 8, and an auto-refresh capability with a 64ms, 8192-cycle refresh count. The memory is available in a 60-ball FBGA package, which is compact and suitable for space-constrained applications. Additionally, it supports a low-power self-refresh mode and is rated for industrial temperature ranges from -40¬8C to +85¬8C, making it suitable for a variety of applications requiring reliable performance under challenging conditions.

Suppliers

Company
Product
Description
Supplier Links
Memory - DDR - MT46V32M16CV-5B IT:J -  - Win Source Electronics
Laguna Hills, CA, United States
Memory - DDR - MT46V32M16CV-5B IT:J
Memory - DDR - MT46V32M16CV-5B IT:J
Series: * Categories: Memory

Series: *
Categories: Memory

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Memory - MT46V32M16CV-5BIT:J-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - DDR Memory IC 512Mb (32M x 16) Parallel 200MHz 700ps 60-FBGA (8x12.5)

SDRAM - DDR Memory IC 512Mb (32M x 16) Parallel 200MHz 700ps 60-FBGA (8x12.5)

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Memory IC and Storage Component - 774-MT46V32M16CV-5B IT:J - ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
Memory IC and Storage Component
774-MT46V32M16CV-5B IT:J
Memory IC and Storage Component 774-MT46V32M16CV-5B IT:J
IC DRAM 512MBIT PARALLEL 60FBGA Product overview: MT46V32M16CV-5B IT:J from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT46V32M16CV-5B IT:J can be used for catalog matching and distributor lookup.

IC DRAM 512MBIT PARALLEL 60FBGA Product overview: MT46V32M16CV-5B IT:J from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT46V32M16CV-5B IT:J can be used for catalog matching and distributor lookup.

Supplier's Site
IC DRAM 512MBIT PARALLEL 60FBGA

IC DRAM 512MBIT PARALLEL 60FBGA

Supplier's Site Datasheet
Memory - MT46V32M16CV-5B IT:J - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR Memory IC 512Mbit Parallel 200 MHz 700 ps 60-FBGA (8x12.5)

SDRAM - DDR Memory IC 512Mbit Parallel 200 MHz 700 ps 60-FBGA (8x12.5)

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Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number MT46V32M16CV-5BIT:J-ND 774-MT46V32M16CV-5B IT:J MT46V32M16CV-5B IT:J MT46V32M16CV-5B IT:J
Product Name Memory - DDR - MT46V32M16CV-5B IT:J Memory Memory IC and Storage Component Memory Memory
Memory Category DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 512000 kbits 512000 kbits 512000 kbits
Package Type 60-TFBGA BGA; Tray BGA; 60-TFBGA
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