The MT46H64M32LFCX-6 AT:B TR is a 2Gb Mobile Low-Power DDR SDRAM memory chip from Quarktwin Technology Ltd. It features a configuration of 16 Meg x 32 with four internal banks, allowing for concurrent operations. The device operates at a voltage range of 1.70 to 1.95V and supports a differential clock input with commands entered on each positive clock edge. It has a maximum clock rate of 166 MHz with a cycle time of 6 ns at CL = 3. This memory chip includes several advanced features such as bidirectional data strobes, programmable burst lengths (2, 4, 8, or 16), and options for auto refresh and self-refresh modes. It also supports temperature-compensated self-refresh and partial-array self-refresh, enhancing power efficiency. The device is available in a 90-ball VFBGA package, measuring 9mm x 13mm, and is suitable for applications requiring low power consumption and compact form factors. The operating temperature range for this part is specified from -40¬8C to +105¬8C, making it suitable for automotive applications.
IC DRAM 2GBIT PARALLEL 90VFBGA
SDRAM - Mobile LPDDR Memory IC 2Gbit Parallel 166 MHz 5 ns 90-VFBGA (9x13)
| Lingto Electronic Limited | Quarktwin Technology Ltd. | |
|---|---|---|
| Product Category | Memory Chips | Memory Chips |
| Product Number | MT46H64M32LFCX-6 AT:B TR | MT46H64M32LFCX-6 AT:B TR |
| Product Name | Memory | Memory |
| Memory Category | DRAM; DRAM Chip | DRAM; DRAM Chip |
| Access Time | 5 ns | 5 ns |
| Density | 2000000 kbits | 2000000 kbits |
