Micron Technology, Inc. Memory MT46H64M32LFCX-6 AT:B TR

Description
SDRAM - Mobile LPDDR Memory IC 2Gbit Parallel 166 MHz 5 ns 90-VFBGA (9x13)
Description
SDRAM - Mobile LPDDR Memory IC 2Gbit Parallel 166 MHz 5 ns 90-VFBGA (9x13)
Datasheet
Datasheet Summary
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The MT46H64M32LFCX-6 AT:B TR is a 2Gb Mobile Low-Power DDR SDRAM memory chip from Quarktwin Technology Ltd. It features a configuration of 16 Meg x 32 with four internal banks, allowing for concurrent operations. The device operates at a voltage range of 1.70 to 1.95V and supports a differential clock input with commands entered on each positive clock edge. It has a maximum clock rate of 166 MHz with a cycle time of 6 ns at CL = 3. This memory chip includes several advanced features such as bidirectional data strobes, programmable burst lengths (2, 4, 8, or 16), and options for auto refresh and self-refresh modes. It also supports temperature-compensated self-refresh and partial-array self-refresh, enhancing power efficiency. The device is available in a 90-ball VFBGA package, measuring 9mm x 13mm, and is suitable for applications requiring low power consumption and compact form factors. The operating temperature range for this part is specified from -40¬8C to +105¬8C, making it suitable for automotive applications.

Datasheet Summary
Powered by GS/AI

The MT46H64M32LFCX-6 AT:B TR is a 2Gb Mobile Low-Power DDR SDRAM memory chip from Quarktwin Technology Ltd. It features a configuration of 16 Meg x 32 with four internal banks, allowing for concurrent operations. The device operates at a voltage range of 1.70 to 1.95V and supports a differential clock input with commands entered on each positive clock edge. It has a maximum clock rate of 166 MHz with a cycle time of 6 ns at CL = 3. This memory chip includes several advanced features such as bidirectional data strobes, programmable burst lengths (2, 4, 8, or 16), and options for auto refresh and self-refresh modes. It also supports temperature-compensated self-refresh and partial-array self-refresh, enhancing power efficiency. The device is available in a 90-ball VFBGA package, measuring 9mm x 13mm, and is suitable for applications requiring low power consumption and compact form factors. The operating temperature range for this part is specified from -40¬8C to +105¬8C, making it suitable for automotive applications.

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SDRAM - Mobile LPDDR Memory IC 2Gbit Parallel 166 MHz 5 ns 90-VFBGA (9x13)

SDRAM - Mobile LPDDR Memory IC 2Gbit Parallel 166 MHz 5 ns 90-VFBGA (9x13)

Buy Now Datasheet
IC DRAM 2GBIT PARALLEL 90VFBGA

IC DRAM 2GBIT PARALLEL 90VFBGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number MT46H64M32LFCX-6 AT:B TR MT46H64M32LFCX-6 AT:B TR
Product Name Memory Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip
Access Time 5 ns 5 ns
Operating Temperature -40 to 105 C (-40 to 221 F)
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