Micron Technology, Inc. Integrated Circuits (ICs) - Memory - Memory MT46H8M16LFBF-6 IT:K TR

Description
IC DRAM 128MBIT PAR 60VFBGA
Datasheet
Description
IC DRAM 128MBIT PAR 60VFBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - Memory - MT46H8M16LFBF-6 IT:K TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT46H8M16LFBF-6 IT:K TR
Integrated Circuits (ICs) - Memory - Memory MT46H8M16LFBF-6 IT:K TR
IC DRAM 128MBIT PAR 60VFBGA

IC DRAM 128MBIT PAR 60VFBGA

Supplier's Site
IC DRAM 128MBIT PARALLEL 60VFBGA

IC DRAM 128MBIT PARALLEL 60VFBGA

Supplier's Site Datasheet
SDRAM - Mobile LPDDR Memory IC 128Mbit Parallel 166 MHz 5 ns 60-VFBGA (8x9)

SDRAM - Mobile LPDDR Memory IC 128Mbit Parallel 166 MHz 5 ns 60-VFBGA (8x9)

Buy Now

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT46H8M16LFBF-6 IT:K TR MT46H8M16LFBF-6 IT:K TR MT46H8M16LFBF-6 IT:K TR
Product Name Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Data Rate 166 MHz
Cycle Time 15 ns
Density 128000 kbits 128000 kbits 128000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS4C1024 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 80 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
 - 27S191DM/B - Rochester Electronics
Specs
Memory Category PROM
Package Type DIP; CDIP24
View Details
6 suppliers
 - NM27C040Q170 - Rochester Electronics
Specs
Memory Category PROM
Package Type DIP; CDIP32
View Details
3 suppliers