RLDRAM 3 Memory IC 1.125Gb (64Mb x 18) Parallel 1.2GHz 6.67ns 168-BGA (13.5x13.5)
Series: *
Categories: Memory
IC DRAM 1.125GBIT PAR 168BGA Product overview: MT44K64M18RB-083F:A from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT44K64M18RB-083
IC DRAM 1.125GBIT PAR 168BGA
IC RLDRAM 1.125GBIT PAR 168BGA
RLDRAM 3 Memory IC 1.125Gbit Parallel 1.2 GHz 6.67 ns 168-BGA (13.5x13.5)
DRAM, 64M X 18BIT, 0 TO 95DEG C; DRAM Type:DDR; DRAM Density:1.125Gbit; DRAM Memory Configuration:64M x 18bit; Clock Frequency:1.2GHz; Memory Case Style:BGA; No. of Pins:168Pins; Supply Voltage Nom:1.35V; Access Time:830ps RoHS Compliant: Yes
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | Quarktwin Technology Ltd. | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | MT44K64M18RB-083F:A-ND | 774-MT44K64M18RB-083F:A | MT44K64M18RB-083F:A | MT44K64M18RB-083F:A | MT44K64M18RB-083F:A | 80AH8076 | |
| Product Name | Memory | Memory - SDRAM - MT44K64M18RB-083F:A | Memory IC and Storage Component | Integrated Circuits (ICs) - Memory - Memory | Memory | Memory | Dram, 64M X 18Bit, 0 To 95Deg C; Dram Type Micron |
| Memory Category | DRAM Chip | Volatile; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip | DRAM Chip | |
| Operating Temperature | 0 to 95 C (32 to 203 F) | 0 to 95 C (32 to 203 F) | 0 to 95 C (32 to 203 F) | ||||
| Package Type | 168-TBGA | BGA; Tray | BGA; 168-TBGA | BGA | |||
| Supply Voltage | 1.28V ~ 1.42V | 1.28V ~ 1.42V | Surface Mount | 1.28V ~ 1.42V | |||
| Access Time | 6.67 ns | 6.67 ns | 6.67 ns | 0.8300 ns |
