RLDRAM 3 Memory IC 1.125Gb (64Mb x 18) Parallel 1.2GHz 6.67ns 168-BGA (13.5x13.5)
Series: *
Categories: Memory
IC DRAM 1.125GBIT PAR 168BGA
DRAM, 64M X 18BIT, 0 TO 95DEG C; DRAM Type:DDR; DRAM Density:1.125Gbit; DRAM Memory Configuration:64M x 18bit; Clock Frequency:1.2GHz; Memory Case Style:BGA; No. of Pins:168Pins; Supply Voltage Nom:1.35V; Access Time:830ps RoHS Compliant: Yes
RLDRAM 3 Memory IC 1.125Gbit Parallel 1.2 GHz 6.67 ns 168-BGA (13.5x13.5)
IC RLDRAM 1.125GBIT PAR 168BGA
| DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Quarktwin Technology Ltd. | Lingto Electronic Limited | |
|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | MT44K64M18RB-083F:A-ND | MT44K64M18RB-083F:A | 80AH8076 | MT44K64M18RB-083F:A | MT44K64M18RB-083F:A | |
| Product Name | Memory | Memory - SDRAM - MT44K64M18RB-083F:A | Integrated Circuits (ICs) - Memory - Memory | Dram, 64M X 18Bit, 0 To 95Deg C; Dram Type Micron | Memory | Memory |
| Memory Category | DRAM Chip | Volatile; DRAM Chip | DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip | |
| Operating Temperature | 0 to 95 C (32 to 203 F) | 0 to 95 C (32 to 203 F) | ||||
| Package Type | 168-TBGA | BGA | BGA; 168-TBGA | |||
| Supply Voltage | 1.28V ~ 1.42V | Surface Mount | 1.28V ~ 1.42V |
