Micron Technology, Inc. Integrated Circuits (ICs) - Memory - Memory MT46V128M4FN-75:D TR

Description
IC DRAM 512MBIT PARALLEL 60FBGA
Description
IC DRAM 512MBIT PARALLEL 60FBGA

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - Memory - MT46V128M4FN-75:D TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT46V128M4FN-75:D TR
Integrated Circuits (ICs) - Memory - Memory MT46V128M4FN-75:D TR
IC DRAM 512MBIT PARALLEL 60FBGA

IC DRAM 512MBIT PARALLEL 60FBGA

Supplier's Site
Memory - MT46V128M4FN-75:D TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR Memory IC 512Mbit Parallel 133 MHz 750 ps 60-FBGA (10x12.5)

SDRAM - DDR Memory IC 512Mbit Parallel 133 MHz 750 ps 60-FBGA (10x12.5)

Buy Now
IC DRAM 512MBIT PARALLEL 60FBGA

IC DRAM 512MBIT PARALLEL 60FBGA

Supplier's Site

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT46V128M4FN-75:D TR MT46V128M4FN-75:D TR MT46V128M4FN-75:D TR
Product Name Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Cycle Time 0.7500 ns
Density 512000 kbits 512000 kbits 512000 kbits
Supply Voltage Surface Mount 2.3V ~ 2.7V
Unlock Full Specs
to access all available technical data

Similar Products

Memory - JM38510/23104BFA - Quarktwin Technology Ltd.
View Details
2 suppliers
SDRAM - 1882660 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 5 ns
Bits per Word 8 bits
View Details
Memory - AS5C1001 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SRAM; SRAM Chip
Access Time 20 to 70 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 2935936 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details