Micron Technology, Inc. Integrated Circuits (ICs) - Memory - Memory MT46H128M16LFB7-5 WT:B TR

Description
IC DRAM 2GBIT PARALLEL 60VFBGA
Datasheet
Description
IC DRAM 2GBIT PARALLEL 60VFBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT46H128M16LFB7-5 WT:B TR
Integrated Circuits (ICs) - Memory - Memory MT46H128M16LFB7-5 WT:B TR
IC DRAM 2GBIT PARALLEL 60VFBGA

IC DRAM 2GBIT PARALLEL 60VFBGA

Supplier's Site
SDRAM - Mobile LPDDR Memory IC 2Gbit Parallel 200 MHz 5 ns 60-VFBGA (10x10)

SDRAM - Mobile LPDDR Memory IC 2Gbit Parallel 200 MHz 5 ns 60-VFBGA (10x10)

Buy Now Datasheet
IC DRAM 2GBIT PARALLEL 60VFBGA

IC DRAM 2GBIT PARALLEL 60VFBGA

Supplier's Site Datasheet

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT46H128M16LFB7-5 WT:B TR MT46H128M16LFB7-5 WT:B TR MT46H128M16LFB7-5 WT:B TR
Product Name Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Data Rate 200 MHz
Cycle Time 15 ns
Density 2000000 kbits 2000000 kbits 2000000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

CD40105B-MIL CMOS 4-Bit-by-16-Word FIFO Register - CD40105BF - Texas Instruments
Specs
Memory Category FIFO
Package Type CDIP,DIESALE
View Details
3 suppliers
Memory - 1072732-00-A - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers
Memory - 24C02/P - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EEPROM; EEPROM
Access Time 900 ns
Density 2 kbits
View Details
Flash Memory - 1882682 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Number of Words 1024 k
View Details