Micron Technology, Inc. Integrated Circuits (ICs) - Memory - Memory MT46H128M16LFB7-5 WT:B TR

Description
IC DRAM 2GBIT PARALLEL 60VFBGA
Datasheet
Description
IC DRAM 2GBIT PARALLEL 60VFBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT46H128M16LFB7-5 WT:B TR
Integrated Circuits (ICs) - Memory - Memory MT46H128M16LFB7-5 WT:B TR
IC DRAM 2GBIT PARALLEL 60VFBGA

IC DRAM 2GBIT PARALLEL 60VFBGA

Supplier's Site
IC DRAM 2GBIT PARALLEL 60VFBGA

IC DRAM 2GBIT PARALLEL 60VFBGA

Supplier's Site Datasheet
SDRAM - Mobile LPDDR Memory IC 2Gbit Parallel 200 MHz 5 ns 60-VFBGA (10x10)

SDRAM - Mobile LPDDR Memory IC 2Gbit Parallel 200 MHz 5 ns 60-VFBGA (10x10)

Buy Now Datasheet

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT46H128M16LFB7-5 WT:B TR MT46H128M16LFB7-5 WT:B TR MT46H128M16LFB7-5 WT:B TR
Product Name Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Data Rate 200 MHz
Cycle Time 15 ns
Density 2000000 kbits 2000000 kbits 2000000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

SN74ACT2226 64 x 1 x 2 dual independent synchronous FIFO memories - SN74ACT2226DWR - Texas Instruments
Specs
Memory Category FIFO
Package Type SOIC
View Details
6 suppliers
Memory - 16-3446-01-T - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers
Memory - AS8FLC1M32A - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category FLASH
Access Time 70 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
SDRAM - 1882600 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 5 ns
Bits per Word 8 bits
View Details