RLDRAM 3 Memory IC 1.125Gbit Parallel 800 MHz 12 ns 168-FBGA (13.5x13.5)
IC DRAM 1.125GBIT PAR 168FBGA
IC RLDRAM 1.125GBIT PAR 800MHZ
| Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | |
|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips |
| Product Number | MT44K32M36RCT-125E:A TR | MT44K32M36RCT-125E:A TR | MT44K32M36RCT-125E:A TR |
| Product Name | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory |
| Memory Category | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip |
| Access Time | 12 ns | 12 ns | |
| Operating Temperature | 0 to 95 C (32 to 203 F) | ||
| Density | 1125000 kbits | 1125000 kbits | 1125000 kbits |
