Micron Technology, Inc. Memory MT44K32M36RCT-125E:A TR

Description
IC RLDRAM 1.125GBIT PAR 800MHZ
Description
IC RLDRAM 1.125GBIT PAR 800MHZ

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IC RLDRAM 1.125GBIT PAR 800MHZ

IC RLDRAM 1.125GBIT PAR 800MHZ

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RLDRAM 3 Memory IC 1.125Gbit Parallel 800 MHz 12 ns 168-FBGA (13.5x13.5)

RLDRAM 3 Memory IC 1.125Gbit Parallel 800 MHz 12 ns 168-FBGA (13.5x13.5)

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Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT44K32M36RCT-125E:A TR
Integrated Circuits (ICs) - Memory - Memory MT44K32M36RCT-125E:A TR
IC DRAM 1.125GBIT PAR 168FBGA

IC DRAM 1.125GBIT PAR 168FBGA

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Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT44K32M36RCT-125E:A TR MT44K32M36RCT-125E:A TR MT44K32M36RCT-125E:A TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 12 ns 12 ns
Density 1125000 kbits 1125000 kbits 1125000 kbits
Operating Temperature 0 to 95 C (32 to 203 F)
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