Micron Technology, Inc. Memory MT44K32M36RCT-125E:A TR

Description
IC RLDRAM 1.125GBIT PAR 800MHZ
Description
IC RLDRAM 1.125GBIT PAR 800MHZ

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IC RLDRAM 1.125GBIT PAR 800MHZ

IC RLDRAM 1.125GBIT PAR 800MHZ

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RLDRAM 3 Memory IC 1.125Gbit Parallel 800 MHz 12 ns 168-FBGA (13.5x13.5)

RLDRAM 3 Memory IC 1.125Gbit Parallel 800 MHz 12 ns 168-FBGA (13.5x13.5)

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Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT44K32M36RCT-125E:A TR
Integrated Circuits (ICs) - Memory - Memory MT44K32M36RCT-125E:A TR
IC DRAM 1.125GBIT PAR 168FBGA

IC DRAM 1.125GBIT PAR 168FBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT44K32M36RCT-125E:A TR MT44K32M36RCT-125E:A TR MT44K32M36RCT-125E:A TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 12 ns 12 ns
Density 1125000 kbits 1125000 kbits 1125000 kbits
Operating Temperature 0 to 95 C (32 to 203 F)
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