IC DRAM 512MBIT PAR 60VFBGA Product overview: MT46H32M16LFBF-6 AAT:C from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT46H32M16LFBF-6
Category: Integrated Circuits (ICs)>Memory
Series: Automotive, AEC-Q100
Package: Tray
Standard Package: 1,782
Mounting: SMD (SMT)
Technology: SDRAM - Mobile LPDDR
Memory Type: Volatile
Memory Size: 512Mb (32M x 16)
Access Time: 5 ns
Voltage - Supply: 1.7V ~ 1.95V
Package / Case: 60-VFBGA
Supplier Device Package: 60-VFBGA (8x9)
Temperature Range - Operating: -40°C ~ 105°C (TA)
Memory Format: DRAM
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Alternative Parts (Cross-Reference): IS46R16320E-6BLA1; IS43R16320E-6BLI; IS46R16320E-5BLA1; MT46V32M16CY-5B AAT:J TR; MT47H64M8SH-25E:H; MT47H64M8SH-25E IT:HMT46H32M16LFBF-6
ECCN: EAR99
Fake Threat In the Open Market: 60 pct.
REACH Status: REACH Unaffected
HTSUS: 8542.32.0028
Mfr: Micron Technology Inc.
Base Product Number: MT46H32M16
Product Status: Obsolete
DRAM, 32M X 16BIT, -40 TO 105DEG C; DRAM Type:LPDDR; DRAM Density:512Mbit; DRAM Memory Configuration:32M x 16bit; Clock Frequency:166MHz; Memory Case Style:VFBGA; No. of Pins:60Pins; Supply Voltage Nom:1.8V; Access Time:6ns RoHS Compliant: Yes
SDRAM - Mobile LPDDR Memory IC 512Mbit Parallel 166 MHz 5 ns 60-VFBGA (8x9)
IC DRAM 512MBIT PAR 60VFBGA
IC DRAM 512MBIT PARALLEL 60VFBGA
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | |
|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-MT46H32M16LFBF-6 AAT:C | 80AH8090 | MT46H32M16LFBF-6 AAT:C | MT46H32M16LFBF-6 AAT:C | MT46H32M16LFBF-6 AAT:C | |
| Product Name | Memory IC and Storage Component | Integrated Circuits (ICs) - Memory | Dram, 32M X 16Bit, -40 To 105Deg C; Dram Type Micron | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory |
| Memory Category | Volatile; DRAM Chip | Volatile; DRAM Chip | DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip |
| Access Time | 5 ns | 5 ns | 6 ns | 5 ns | 5 ns | |
| Cycle Time | 15 ns | 15 ns | 15 ns | |||
| Operating Temperature | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | |||
| Package Type | BGA; Tray | VFBGA | BGA; 60-VFBGA |
