Micron Technology, Inc. Memory MT46V128M4P-5B:F

Description
IC DRAM 512MBIT PARALLEL 66TSOP
Datasheet
Description
IC DRAM 512MBIT PARALLEL 66TSOP
Datasheet

Suppliers

Company
Product
Description
Supplier Links
IC DRAM 512MBIT PARALLEL 66TSOP

IC DRAM 512MBIT PARALLEL 66TSOP

Supplier's Site Datasheet
Memory - MT46V128M4P-5B:F - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR Memory IC 512Mbit Parallel 200 MHz 700 ps 66-TSOP

SDRAM - DDR Memory IC 512Mbit Parallel 200 MHz 700 ps 66-TSOP

Buy Now Datasheet

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number MT46V128M4P-5B:F MT46V128M4P-5B:F
Product Name Memory Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip
Access Time 0.7000 ns 0.7000 ns
Density 512000 kbits 512000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Integrated Circuits (ICs) - Memory - Memory - NMC27C256BN150 - Acme Chip Technology Co., Limited
Specs
Memory Category EPROM; Non-Volatile
Density 256 kbits
Supply Voltage 28-DIP (0.600, 15.24mm)
View Details
2 suppliers
Memory - MT5C1008 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SRAM; SRAM Chip
Access Time 12 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 71016S20YGI - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 20 ns
Density 1000 kbits
View Details