Micron Technology, Inc. Memory MT46V128M4P-5B:F

Description
SDRAM - DDR Memory IC 512Mbit Parallel 200 MHz 700 ps 66-TSOP
Datasheet
Description
SDRAM - DDR Memory IC 512Mbit Parallel 200 MHz 700 ps 66-TSOP
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MT46V128M4P-5B:F - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR Memory IC 512Mbit Parallel 200 MHz 700 ps 66-TSOP

SDRAM - DDR Memory IC 512Mbit Parallel 200 MHz 700 ps 66-TSOP

Buy Now Datasheet
IC DRAM 512MBIT PARALLEL 66TSOP

IC DRAM 512MBIT PARALLEL 66TSOP

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number MT46V128M4P-5B:F MT46V128M4P-5B:F
Product Name Memory Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip
Access Time 0.7000 ns 0.7000 ns
Operating Temperature 0 to 70 C (32 to 158 F)
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882561 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Bits per Word 8 bits
View Details
Integrated Circuits (ICs) - Memory - Memory - NM27C020T200 - Shenzhen Shengyu Electronics Technology Limited
Specs
Memory Category EPROM; Non-Volatile
Cycle Time 200 ns
Density 2000 kbits
View Details
2 suppliers
Memory - AS8E128K32 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category EEPROM; EEPROM
Access Time 250 to 300 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details