RLDRAM 3 Memory IC 1.125Gb (64Mb x 18) Parallel 933MHz 8ns 168-BGA (13.5x13.5)
IC DRAM 1.125GBIT PAR 168BGA Product overview: MT44K64M18RB-107E:A from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT44K64M18RB-107
Manufacturer: Micron Technology Inc.
Operating Temperature Range: 0°C ~ 95°C (TC)
Features: RLDRAM 3 Memory IC 1.125Gb (64Mb x 18) Parallel 933 MHz 8 ns 168-BGA (13.5x13.5)
Package: 168-TBGA
Package: Tray
Mounting: Surface Mount
Family Name: MT44K64
Categories: Integrated Circuits (ICs)
Case / Package: 168-BGA (13.5x13.5)
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance
Quantity per package: 1190
Estimated Pruduction Lead Time: 35 Weeks
REACH Status: REACH Unaffected
HTSUS: 8542.32.0036
IC DRAM 1.125GBIT PAR 168BGA
RLDRAM 3 Memory IC 1.125Gbit Parallel 933 MHz 8 ns 168-BGA (13.5x13.5)
IC RLDRAM 1.125GBIT PAR 168BGA
DRAM, 64M X 18BIT, 0 TO 95DEG C; DRAM Type:DDR; DRAM Density:1.125Gbit; DRAM Memory Configuration:64M x 18bit; Clock Frequency:1.2GHz; Memory Case Style:BGA; No. of Pins:168Pins; Supply Voltage Nom:1.35V; Access Time:1.07ns RoHS Compliant: Yes
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | Lingto Electronic Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | MT44K64M18RB-107E:A-ND | 774-MT44K64M18RB-107E:A | MT44K64M18RB-107E:A | MT44K64M18RB-107E:A | MT44K64M18RB-107E:A | 80AH8079 | |
| Product Name | Memory | Memory IC and Storage Component | Memory - SDRAM - MT44K64M18RB-107E:A | Integrated Circuits (ICs) - Memory - Memory | Memory | Memory | Dram, 64M X 18Bit, 0 To 95Deg C; Dram Type Micron |
| Memory Category | DRAM Chip | Volatile; DRAM Chip | DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip | DRAM Chip |
| Operating Temperature | 0 to 95 C (32 to 203 F) | 0 to 95 C (32 to 203 F) | 0 to 95 C (32 to 203 F) | 0 to 95 C (32 to 203 F) | |||
| Package Type | 168-TBGA | BGA; Tray | BGA; 168-BGA (13.5x13.5) | BGA; 168-TBGA | BGA | ||
| Supply Voltage | 1.28V ~ 1.42V | 1.28V ~ 1.42V | Surface Mount | 1.28V ~ 1.42V | |||
| Access Time | 8 ns | 8 ns | 8 ns | 1.07 ns |
