Micron Technology, Inc. Memory MT46V16M16P-5B:M

Description
IC DRAM 256MBIT PARALLEL 66TSOP
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Description
IC DRAM 256MBIT PARALLEL 66TSOP
Request a Quote
Datasheet
Datasheet Summary
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The MT46V16M16P-5B:M is a 256Mb Automotive DDR SDRAM memory device featuring a 4 Meg x 16 configuration with four internal banks. It operates at a cycle time of 5ns with a CAS latency of 3, supporting DDR400 speeds. The device is designed for automotive applications, with a temperature rating of -40¬8C to +105¬8C, ensuring reliability in harsh environments. It requires a supply voltage of 2.5V ¬±0.2V and is compatible with SSTL_2 I/O standards. The memory supports bidirectional data strobe (DQS) for synchronous data capture and offers programmable burst lengths of 2, 4, or 8. Additionally, it includes features such as auto refresh and a data mask for write operations. The device is available in both 66-pin TSOP and 60-ball FBGA packages, with Pb-free options. This product is suitable for engineers looking for robust memory solutions in automotive applications.

Datasheet Summary
Powered by GS/AI

The MT46V16M16P-5B:M is a 256Mb Automotive DDR SDRAM memory device featuring a 4 Meg x 16 configuration with four internal banks. It operates at a cycle time of 5ns with a CAS latency of 3, supporting DDR400 speeds. The device is designed for automotive applications, with a temperature rating of -40¬8C to +105¬8C, ensuring reliability in harsh environments. It requires a supply voltage of 2.5V ¬±0.2V and is compatible with SSTL_2 I/O standards. The memory supports bidirectional data strobe (DQS) for synchronous data capture and offers programmable burst lengths of 2, 4, or 8. Additionally, it includes features such as auto refresh and a data mask for write operations. The device is available in both 66-pin TSOP and 60-ball FBGA packages, with Pb-free options. This product is suitable for engineers looking for robust memory solutions in automotive applications.

Suppliers

Company
Product
Description
Supplier Links
IC DRAM 256MBIT PARALLEL 66TSOP

IC DRAM 256MBIT PARALLEL 66TSOP

Supplier's Site Datasheet
Memory - MT46V16M16P-5B:M-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - DDR Memory IC 256Mb (16M x 16) Parallel 200MHz 700ps 66-TSOP

SDRAM - DDR Memory IC 256Mb (16M x 16) Parallel 200MHz 700ps 66-TSOP

Buy Now Datasheet
Memory - SDRAM - MT46V16M16P-5B:M -  - Win Source Electronics
Laguna Hills, CA, United States
Memory - SDRAM - MT46V16M16P-5B:M
Memory - SDRAM - MT46V16M16P-5B:M
Manufacturer: Micron Technology Inc. Packaging: Tray Mounting: SMD (SMT) Technology: SDRAM - DDR Memory Type: Volatile Memory Size: 256Mb (16M x 16) Access Time: 700ps Categories: Integrated Circuits Status: Active Temperature Range - Operating: 0°C to 70°C (TA) Case / Package: 66-TSOP Supply Voltage - Operating: 2.5 V to 2.7 V Memory Format: DRAM Max Frequency: 200MHz Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Sufficient

Manufacturer: Micron Technology Inc.
Packaging: Tray
Mounting: SMD (SMT)
Technology: SDRAM - DDR
Memory Type: Volatile
Memory Size: 256Mb (16M x 16)
Access Time: 700ps
Categories: Integrated Circuits
Status: Active
Temperature Range - Operating: 0°C to 70°C (TA)
Case / Package: 66-TSOP
Supply Voltage - Operating: 2.5 V to 2.7 V
Memory Format: DRAM
Max Frequency: 200MHz
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
IC DRAM 256MBIT PARALLEL 66TSOP

IC DRAM 256MBIT PARALLEL 66TSOP

Supplier's Site Datasheet
Memory - MT46V16M16P-5B:M - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR Memory IC 256Mbit Parallel 200 MHz 700 ps 66-TSOP

SDRAM - DDR Memory IC 256Mbit Parallel 200 MHz 700 ps 66-TSOP

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - MT46V16M16P-5B:M - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT46V16M16P-5B:M
Integrated Circuits (ICs) - Memory - Memory MT46V16M16P-5B:M
IC DRAM 256MBIT PARALLEL 66TSOP

IC DRAM 256MBIT PARALLEL 66TSOP

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number MT46V16M16P-5B:M MT46V16M16P-5B:M-ND MT46V16M16P-5B:M MT46V16M16P-5B:M MT46V16M16P-5B:M
Product Name Memory Memory Memory - SDRAM - MT46V16M16P-5B:M Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SDRAM - DDR; DRAM Chip DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Data Rate 200 MHz 200 MHz
Access Time 0.7000 ns 0.7000 ns 0.7000 ns 0.7000 ns
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
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