Micron Technology, Inc. Memory MT46V16M16P-5B:M

Description
SDRAM - DDR Memory IC 256Mb (16M x 16) Parallel 200MHz 700ps 66-TSOP
Request a Quote
Description
SDRAM - DDR Memory IC 256Mb (16M x 16) Parallel 200MHz 700ps 66-TSOP
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The MT46V16M16P-5B:M is a 256Mb Automotive DDR SDRAM memory device featuring a 4 Meg x 16 configuration with four internal banks. It operates at a cycle time of 5ns with a CAS latency of 3, supporting DDR400 speeds. The device is designed for automotive applications, with a temperature rating of -40¬8C to +105¬8C, ensuring reliability in harsh environments. It requires a supply voltage of 2.5V ¬±0.2V and is compatible with SSTL_2 I/O standards. The memory supports bidirectional data strobe (DQS) for synchronous data capture and offers programmable burst lengths of 2, 4, or 8. Additionally, it includes features such as auto refresh and a data mask for write operations. The device is available in both 66-pin TSOP and 60-ball FBGA packages, with Pb-free options. This product is suitable for engineers looking for robust memory solutions in automotive applications.

Datasheet Summary
Powered by GS/AI

The MT46V16M16P-5B:M is a 256Mb Automotive DDR SDRAM memory device featuring a 4 Meg x 16 configuration with four internal banks. It operates at a cycle time of 5ns with a CAS latency of 3, supporting DDR400 speeds. The device is designed for automotive applications, with a temperature rating of -40¬8C to +105¬8C, ensuring reliability in harsh environments. It requires a supply voltage of 2.5V ¬±0.2V and is compatible with SSTL_2 I/O standards. The memory supports bidirectional data strobe (DQS) for synchronous data capture and offers programmable burst lengths of 2, 4, or 8. Additionally, it includes features such as auto refresh and a data mask for write operations. The device is available in both 66-pin TSOP and 60-ball FBGA packages, with Pb-free options. This product is suitable for engineers looking for robust memory solutions in automotive applications.

Suppliers

Company
Product
Description
Supplier Links
Memory - MT46V16M16P-5B:M-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - DDR Memory IC 256Mb (16M x 16) Parallel 200MHz 700ps 66-TSOP

SDRAM - DDR Memory IC 256Mb (16M x 16) Parallel 200MHz 700ps 66-TSOP

Buy Now Datasheet
Memory - SDRAM - MT46V16M16P-5B:M -  - Win Source Electronics
Laguna Hills, CA, United States
Memory - SDRAM - MT46V16M16P-5B:M
Memory - SDRAM - MT46V16M16P-5B:M
Manufacturer: Micron Technology Inc. Packaging: Tray Mounting: SMD (SMT) Technology: SDRAM - DDR Memory Type: Volatile Memory Size: 256Mb (16M x 16) Access Time: 700ps Categories: Integrated Circuits Status: Active Temperature Range - Operating: 0°C to 70°C (TA) Case / Package: 66-TSOP Supply Voltage - Operating: 2.5 V to 2.7 V Memory Format: DRAM Max Frequency: 200MHz Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Sufficient

Manufacturer: Micron Technology Inc.
Packaging: Tray
Mounting: SMD (SMT)
Technology: SDRAM - DDR
Memory Type: Volatile
Memory Size: 256Mb (16M x 16)
Access Time: 700ps
Categories: Integrated Circuits
Status: Active
Temperature Range - Operating: 0°C to 70°C (TA)
Case / Package: 66-TSOP
Supply Voltage - Operating: 2.5 V to 2.7 V
Memory Format: DRAM
Max Frequency: 200MHz
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
IC DRAM 256MBIT PARALLEL 66TSOP

IC DRAM 256MBIT PARALLEL 66TSOP

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - MT46V16M16P-5B:M - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT46V16M16P-5B:M
Integrated Circuits (ICs) - Memory - Memory MT46V16M16P-5B:M
IC DRAM 256MBIT PARALLEL 66TSOP

IC DRAM 256MBIT PARALLEL 66TSOP

Supplier's Site
IC DRAM 256MBIT PARALLEL 66TSOP

IC DRAM 256MBIT PARALLEL 66TSOP

Supplier's Site Datasheet
Memory - MT46V16M16P-5B:M - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR Memory IC 256Mbit Parallel 200 MHz 700 ps 66-TSOP

SDRAM - DDR Memory IC 256Mbit Parallel 200 MHz 700 ps 66-TSOP

Buy Now Datasheet

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number MT46V16M16P-5B:M-ND MT46V16M16P-5B:M MT46V16M16P-5B:M MT46V16M16P-5B:M MT46V16M16P-5B:M
Product Name Memory Memory - SDRAM - MT46V16M16P-5B:M Memory Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category DRAM Chip Volatile; DRAM Chip SDRAM - DDR; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 256000 kbits 256000 kbits 256000 kbits 256000 kbits 256000 kbits
Package Type TSSOP; "66-TSSOP (0.400"", 10.16mm Width)" SOP; 66-TSOP 66-TSSOP (0.400", 10.16mm Width) SSOP; TSSOP; 66-TSSOP (0.400\", 10.16mm Width)
Unlock Full Specs
to access all available technical data

Similar Products

Memory - SMJ418160 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 70 to 80 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 24C16/P - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EEPROM; EEPROM
Access Time 3500 ns
Density 16 kbits
View Details
SDRAM - 2420773 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 20 ns
Number of Words 64000 k
View Details
Memory - 9021931 - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers