Micron Technology, Inc. Memory MT44K32M18RB-125E IT:A

Description
IC DRAM 576MBIT PARALLEL 168BGA
Datasheet
Description
IC DRAM 576MBIT PARALLEL 168BGA
Datasheet

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IC DRAM 576MBIT PARALLEL 168BGA

IC DRAM 576MBIT PARALLEL 168BGA

Supplier's Site Datasheet
DRAM Memory IC 576Mbit Parallel 800 MHz 10 ns 168-BGA (13.5x13.5)

DRAM Memory IC 576Mbit Parallel 800 MHz 10 ns 168-BGA (13.5x13.5)

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Integrated Circuits (ICs) - Memory - Memory - MT44K32M18RB-125E IT:A - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT44K32M18RB-125E IT:A
Integrated Circuits (ICs) - Memory - Memory MT44K32M18RB-125E IT:A
IC DRAM 576MBIT PARALLEL 168BGA

IC DRAM 576MBIT PARALLEL 168BGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT44K32M18RB-125E IT:A MT44K32M18RB-125E IT:A MT44K32M18RB-125E IT:A
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 10 ns 10 ns
Density 576000 kbits 576000 kbits 576000 kbits
Operating Temperature -40 to 95 C (-40 to 203 F)
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