DRAM Memory IC 576Mbit Parallel 800 MHz 10 ns 168-BGA (13.5x13.5)
IC DRAM 576MBIT PARALLEL 168BGA
IC DRAM 576MBIT PARALLEL 168BGA
| Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | |
|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips |
| Product Number | MT44K32M18RB-125E IT:A | MT44K32M18RB-125E IT:A | MT44K32M18RB-125E IT:A |
| Product Name | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory |
| Memory Category | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip |
| Access Time | 10 ns | 10 ns | |
| Operating Temperature | -40 to 95 C (-40 to 203 F) | ||
| Density | 576000 kbits | 576000 kbits | 576000 kbits |
