SDRAM - DDR Memory IC 512Mb (32M x 16) Parallel 200MHz 700ps 60-FBGA (8x12.5)
IC DRAM 512MBIT PARALLEL 60FBGA Product overview: MT46V32M16CY-5B IT:J from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT46V32M16CY-5B IT:J can be used for catalog matching and distributor lookup.
Manufacturer: Micron Technology Inc.
Packaging: Bulk
Mounting Style: SMD
Technology: SDRAM - DDR
Memory Type: Volatile
Memory Size: 512Mb (32M x 16)
Access Time: 700ps
Supplier Device Package: 60-FBGA (8x12.5)
Temperature Range - Operating: -40°C ~ 85°C
Memory Format: DRAM
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Manufacturer Package: 60-TFBGA
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1,368
MSL Level: 3 (168 Hours)
Supply Voltage (V): 2.5V ~ 2.7V
Part Number Series: MT46V32M16
SDRAM - DDR Memory IC 512Mbit Parallel 200 MHz 700 ps 60-FBGA (8x12.5)
IC DRAM 512MBIT PARALLEL 60FBGA
IC DRAM 512MBIT PARALLEL 60FBGA
IC DRAM 512MBIT PARALLEL 60FBGA
DRAM, 32M X 16BIT, -40 TO 85DEG C; DRAM Type:DDR; DRAM Density:512Mbit; DRAM Memory Configuration:32M x 16bit; Clock Frequency:200MHz; Memory Case Style:FBGA; No. of Pins:60Pins; Supply Voltage Nom:2.5V; Access Time:5ns RoHS Compliant: Yes
IC DRAM 512M PARALLEL 60FBGA
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Quarktwin Technology Ltd. | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | Newark, An Avnet Company | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | MT46V32M16CY-5BIT:J-ND | 774-MT46V32M16CY-5B IT:J | MT46V32M16CY-5B IT:J | MT46V32M16CY-5B IT:J | MT46V32M16CY-5B IT:J | MT46V32M16CY-5B IT:J | 80AH8107 | 533-MT46V32M16CY-5B IT:J | |
| Product Name | Memory | Memory IC and Storage Component | Memory - SDRAM - MT46V32M16CY-5B IT:J | Memory | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory | Dram, 32M X 16Bit, -40 To 85Deg C; Dram Type Micron | IC DRAM 512M PARALLEL 60FBGA |
| Memory Category | DRAM Chip | Volatile; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | SDRAM - DDR; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM Chip | Volatile; DRAM Chip |
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | |||
| Density | 512000 kbits | 512000 kbits | 512000 kbits | 512000 kbits | 512000 kbits | 512000 kbits | 512000 kbits | 536871 kbits | |
| Package Type | 60-TFBGA | BGA; Bulk | BGA; 60-TFBGA | 60-TFBGA | BGA | FBGA | 60-TFBGA | ||
| Supply Voltage | 2.5V ~ 2.7V | 2.5V ~ 2.7V | 2.5V ~ 2.7V | 2.5V ~ 2.7V | 2.5V ~ 2.7V | -40degC ~ 85degC (TA) | 2.6V |
