Micron Technology, Inc. Memory MT46V128M4BN-6:F TR

Description
SDRAM - DDR Memory IC 512Mbit Parallel 167 MHz 700 ps 60-FBGA (10x12.5)
Datasheet
Description
SDRAM - DDR Memory IC 512Mbit Parallel 167 MHz 700 ps 60-FBGA (10x12.5)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MT46V128M4BN-6:F TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR Memory IC 512Mbit Parallel 167 MHz 700 ps 60-FBGA (10x12.5)

SDRAM - DDR Memory IC 512Mbit Parallel 167 MHz 700 ps 60-FBGA (10x12.5)

Buy Now Datasheet
IC DRAM 512MBIT PARALLEL 60FBGA

IC DRAM 512MBIT PARALLEL 60FBGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number MT46V128M4BN-6:F TR MT46V128M4BN-6:F TR
Product Name Memory Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip
Access Time 0.7000 ns 0.7000 ns
Operating Temperature 0 to 70 C (32 to 158 F)
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882565 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Number of Words 1024 k
View Details
Memory - SMJ44400 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 80 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - Controllers - NSBMC096VF-25 - Lingto Electronic Limited
Specs
Operating Temperature 0 to 70 C (32 to 158 F)
Package Type QFP; 132-BQFP Bumpered
View Details
2 suppliers