Micron Technology, Inc. Memory MT46H64M32LFBQ-48 WT:C

Description
SDRAM - Mobile LPDDR Memory IC 2Gb (64M x 32) Parallel 208MHz 5ns 90-VFBGA (8x13)
  • Memory - MT46H64M32LFBQ-48WT:C-ND - DigiKey
    DigiKey
  • Memory - SDRAM - MT46H64M32LFBQ-48 WT:C - Win Source Electronics
    Win Source Electronics
  • Memory - MT46H64M32LFBQ-48 WT:C - Lingto Electronic Limited
    Lingto Electronic Limited
  • Memory - MT46H64M32LFBQ-48 WT:C - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Integrated Circuits (ICs) - Memory - Memory - MT46H64M32LFBQ-48 WT:C - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Memory - MT46H64M32LFBQ-48 WT:C - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
  • Dram, 64M X 32Bit, -25 To 85Deg C; Dram Type Micron - 80AH8099 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
SDRAM - Mobile LPDDR Memory IC 2Gb (64M x 32) Parallel 208MHz 5ns 90-VFBGA (8x13)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MT46H64M32LFBQ-48WT:C-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Memory
MT46H64M32LFBQ-48WT:C-ND
Memory MT46H64M32LFBQ-48WT:C-ND
SDRAM - Mobile LPDDR Memory IC 2Gb (64M x 32) Parallel 208MHz 5ns 90-VFBGA (8x13)

SDRAM - Mobile LPDDR Memory IC 2Gb (64M x 32) Parallel 208MHz 5ns 90-VFBGA (8x13)

Buy Now Datasheet
Memory - SDRAM - MT46H64M32LFBQ-48 WT:C - - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Memory - SDRAM - MT46H64M32LFBQ-48 WT:C
Memory - SDRAM - MT46H64M32LFBQ-48 WT:C
Manufacturer: Micron Technology Inc. Packaging: Bulk Mounting Style: SMD Technology: SDRAM - Mobile LPDDR Memory Type: Volatile Memory Size: 2Gb (64M x 32) Access Time: 5.0ns Categories: Integrated Circuits Supplier Device Package: 90-VFBGA (8x13) Temperature Range - Operating: -25°C ~ 85°C Memory Format: DRAM Clock Frequency: 208MHz Write Cycle Time - Word, Page: 14.4ns Memory Interface: Parallel Manufacturer Package: 90-VFBGA Popularity: Low Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1,440 MSL Level: 3 (168 Hours) Supply Voltage (V): 1.7V ~ 1.95V

Manufacturer: Micron Technology Inc.
Packaging: Bulk
Mounting Style: SMD
Technology: SDRAM - Mobile LPDDR
Memory Type: Volatile
Memory Size: 2Gb (64M x 32)
Access Time: 5.0ns
Categories: Integrated Circuits
Supplier Device Package: 90-VFBGA (8x13)
Temperature Range - Operating: -25°C ~ 85°C
Memory Format: DRAM
Clock Frequency: 208MHz
Write Cycle Time - Word, Page: 14.4ns
Memory Interface: Parallel
Manufacturer Package: 90-VFBGA
Popularity: Low
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1,440
MSL Level: 3 (168 Hours)
Supply Voltage (V): 1.7V ~ 1.95V

Buy Now
Memory - MT46H64M32LFBQ-48 WT:C - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
MT46H64M32LFBQ-48 WT:C
Memory MT46H64M32LFBQ-48 WT:C
IC DRAM 2GBIT PARALLEL 90VFBGA

IC DRAM 2GBIT PARALLEL 90VFBGA

Supplier's Site Datasheet
Memory - MT46H64M32LFBQ-48 WT:C - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Memory
MT46H64M32LFBQ-48 WT:C
Memory MT46H64M32LFBQ-48 WT:C
IC DRAM 2GBIT PARALLEL 90VFBGA

IC DRAM 2GBIT PARALLEL 90VFBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - MT46H64M32LFBQ-48 WT:C - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT46H64M32LFBQ-48 WT:C
Integrated Circuits (ICs) - Memory - Memory MT46H64M32LFBQ-48 WT:C
IC DRAM 2GBIT PAR 208MHZ 90VFBGA

IC DRAM 2GBIT PAR 208MHZ 90VFBGA

Supplier's Site
Memory - MT46H64M32LFBQ-48 WT:C - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
MT46H64M32LFBQ-48 WT:C
Memory MT46H64M32LFBQ-48 WT:C
SDRAM - Mobile LPDDR Memory IC 2Gbit Parallel 208 MHz 5 ns 90-VFBGA (8x13)

SDRAM - Mobile LPDDR Memory IC 2Gbit Parallel 208 MHz 5 ns 90-VFBGA (8x13)

Buy Now Datasheet
Dram, 64M X 32Bit, -25 To 85Deg C; Dram Type Micron - 80AH8099 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Dram, 64M X 32Bit, -25 To 85Deg C; Dram Type Micron
80AH8099
Dram, 64M X 32Bit, -25 To 85Deg C; Dram Type Micron 80AH8099
DRAM, 64M X 32BIT, -25 TO 85DEG C; DRAM Type:LPDDR; DRAM Density:2Gbit; DRAM Memory Configuration:64M x 32bit; Clock Frequency:208MHz; Memory Case Style:VFBGA; No. of Pins:90Pins; Supply Voltage Nom:1.8V; Access Time:4.8ns RoHS Compliant: Yes

DRAM, 64M X 32BIT, -25 TO 85DEG C; DRAM Type:LPDDR; DRAM Density:2Gbit; DRAM Memory Configuration:64M x 32bit; Clock Frequency:208MHz; Memory Case Style:VFBGA; No. of Pins:90Pins; Supply Voltage Nom:1.8V; Access Time:4.8ns RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  DigiKey Win Source Electronics Lingto Electronic Limited ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Newark, An Avnet Company
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number MT46H64M32LFBQ-48WT:C-ND MT46H64M32LFBQ-48 WT:C MT46H64M32LFBQ-48 WT:C MT46H64M32LFBQ-48 WT:C MT46H64M32LFBQ-48 WT:C 80AH8099
Product Name Memory Memory - SDRAM - MT46H64M32LFBQ-48 WT:C Memory Memory Integrated Circuits (ICs) - Memory - Memory Memory Dram, 64M X 32Bit, -25 To 85Deg C; Dram Type Micron
Memory Category DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip SDRAM - Mobile LPDDR; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip DRAM Chip
Operating Temperature -25 to 85 C (-13 to 185 F) -25 to 85 C (-13 to 185 F) -25 to 85 C (-13 to 185 F) -25 to 85 C (-13 to 185 F)
Package Type 90-VFBGA 90-VFBGA BGA BGA; 90-VFBGA VFBGA
Supply Voltage 1.7V ~ 1.95V 1.7V ~ 1.95V 1.7V ~ 1.95V -25degC ~ 85degC (TA) 1.7V ~ 1.95V
Access Time 5 ns 5 ns 5 ns 5 ns 4.8 ns
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