Micron Technology, Inc. Memory - DDR - MT46H64M32LFBQ-48 IT:C MT46H64M32LFBQ-48 IT:C

Description
Series: * Categories: Memory
Request a Quote Datasheet
Description
Series: * Categories: Memory
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - DDR - MT46H64M32LFBQ-48 IT:C -  - Win Source Electronics
Laguna Hills, CA, United States
Memory - DDR - MT46H64M32LFBQ-48 IT:C
Memory - DDR - MT46H64M32LFBQ-48 IT:C
Series: * Categories: Memory

Series: *
Categories: Memory

Buy Now
208MHZ Memory IC and Storage Component - 774-MT46H64M32LFBQ-48 IT:C - ERSAELECTRONICS PTE. LTD.
Singapore
208MHZ Memory IC and Storage Component
774-MT46H64M32LFBQ-48 IT:C
208MHZ Memory IC and Storage Component 774-MT46H64M32LFBQ-48 IT:C
IC DRAM 2GBIT PAR 208MHZ 90VFBGA Product overview: MT46H64M32LFBQ-48 IT:C from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 208MHZ. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 208MHZ, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT46H64M32LFBQ-4 8 IT:C can be used for catalog matching and distributor lookup.

IC DRAM 2GBIT PAR 208MHZ 90VFBGA Product overview: MT46H64M32LFBQ-48 IT:C from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 208MHZ. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 208MHZ, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT46H64M32LFBQ-48 IT:C can be used for catalog matching and distributor lookup.

Supplier's Site
Memory - MT46H64M32LFBQ-48IT:C-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - Mobile LPDDR Memory IC 2Gb (64M x 32) Parallel 208MHz 5ns 90-VFBGA (8x13)

SDRAM - Mobile LPDDR Memory IC 2Gb (64M x 32) Parallel 208MHz 5ns 90-VFBGA (8x13)

Buy Now Datasheet
IC DRAM 2GBIT PARALLEL 90VFBGA

IC DRAM 2GBIT PARALLEL 90VFBGA

Supplier's Site Datasheet
IC DRAM 2GBIT PARALLEL 90VFBGA

IC DRAM 2GBIT PARALLEL 90VFBGA

Supplier's Site Datasheet
Dram, 64M X 32Bit, -40 To 85Deg C; Dram Type Micron - 80AH8098 - Newark, An Avnet Company
Chicago, IL, United States
Dram, 64M X 32Bit, -40 To 85Deg C; Dram Type Micron
80AH8098
Dram, 64M X 32Bit, -40 To 85Deg C; Dram Type Micron 80AH8098
DRAM, 64M X 32BIT, -40 TO 85DEG C; DRAM Type:LPDDR; DRAM Density:2Gbit; DRAM Memory Configuration:64M x 32bit; Clock Frequency:208MHz; Memory Case Style:VFBGA; No. of Pins:90Pins; Supply Voltage Nom:1.8V; Access Time:4.8ns RoHS Compliant: Yes

DRAM, 64M X 32BIT, -40 TO 85DEG C; DRAM Type:LPDDR; DRAM Density:2Gbit; DRAM Memory Configuration:64M x 32bit; Clock Frequency:208MHz; Memory Case Style:VFBGA; No. of Pins:90Pins; Supply Voltage Nom:1.8V; Access Time:4.8ns RoHS Compliant: Yes

Supplier's Site
Dram, 64M X 32Bit, -40 To 85Deg C Rohs Compliant Micron - 51AK1367 - Newark, An Avnet Company
Chicago, IL, United States
Dram, 64M X 32Bit, -40 To 85Deg C Rohs Compliant Micron
51AK1367
Dram, 64M X 32Bit, -40 To 85Deg C Rohs Compliant Micron 51AK1367
DRAM, 64M X 32BIT, -40 TO 85DEG C ROHS COMPLIANT: YES

DRAM, 64M X 32BIT, -40 TO 85DEG C ROHS COMPLIANT: YES

Supplier's Site
SDRAM - Mobile LPDDR Memory IC 2Gbit Parallel 208 MHz 5 ns 90-VFBGA (8x13)

SDRAM - Mobile LPDDR Memory IC 2Gbit Parallel 208 MHz 5 ns 90-VFBGA (8x13)

Buy Now Datasheet
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT46H64M32LFBQ-48 IT:C
Integrated Circuits (ICs) - Memory - Memory MT46H64M32LFBQ-48 IT:C
IC DRAM 2GBIT PAR 208MHZ 90VFBGA

IC DRAM 2GBIT PAR 208MHZ 90VFBGA

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey ODG (Origin Data Global) Lingto Electronic Limited Newark, An Avnet Company Newark, An Avnet Company Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 774-MT46H64M32LFBQ-48 IT:C MT46H64M32LFBQ-48IT:C-ND MT46H64M32LFBQ-48 IT:C MT46H64M32LFBQ-48 IT:C 80AH8098 51AK1367 MT46H64M32LFBQ-48 IT:C MT46H64M32LFBQ-48 IT:C
Product Name Memory - DDR - MT46H64M32LFBQ-48 IT:C 208MHZ Memory IC and Storage Component Memory Memory Memory Dram, 64M X 32Bit, -40 To 85Deg C; Dram Type Micron Dram, 64M X 32Bit, -40 To 85Deg C Rohs Compliant Micron Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Volatile; DRAM Chip DRAM Chip SDRAM - Mobile LPDDR; DRAM Chip DRAM; DRAM Chip DRAM Chip DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 5 ns 5 ns 5 ns 4.8 ns 5 ns
Cycle Time 14.4 ns 14.4 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 2000000 kbits 2000000 kbits 2000000 kbits 2000000 kbits 2000000 kbits 2000000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS8F512K32 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category FLASH
Access Time 70 to 150 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - PAL16R6AJ/883 - Quarktwin Technology Ltd.
Texas Instruments
View Details
2 suppliers
Memory - 27C256-20/P - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EPROM; EPROM
Access Time 200 ns
Density 256 kbits
View Details
Memory - 550115-001-00 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers