Micron Technology, Inc. Memory MT46V32M16FN-6:C

Description
IC DRAM 512MBIT PARALLEL 60FBGA
Datasheet
Description
IC DRAM 512MBIT PARALLEL 60FBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
IC DRAM 512MBIT PARALLEL 60FBGA

IC DRAM 512MBIT PARALLEL 60FBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - MT46V32M16FN-6:C - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT46V32M16FN-6:C
Integrated Circuits (ICs) - Memory - Memory MT46V32M16FN-6:C
IC DRAM 512MBIT PAR 60FBGA

IC DRAM 512MBIT PAR 60FBGA

Supplier's Site
Memory - MT46V32M16FN-6:C - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR Memory IC 512Mbit Parallel 167 MHz 700 ps 60-FBGA (10x12.5)

SDRAM - DDR Memory IC 512Mbit Parallel 167 MHz 700 ps 60-FBGA (10x12.5)

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Technical Specifications

  Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT46V32M16FN-6:C MT46V32M16FN-6:C MT46V32M16FN-6:C
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Access Time 0.7000 ns 0.7000 ns
Density 512000 kbits 512000 kbits 512000 kbits
Cycle Time 0.7000 ns
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