Micron Technology, Inc. Memory MT46V32M16BN-75 L:C

Description
IC DRAM 512MBIT PARALLEL 60FBGA
Description
IC DRAM 512MBIT PARALLEL 60FBGA

Suppliers

Company
Product
Description
Supplier Links
IC DRAM 512MBIT PARALLEL 60FBGA

IC DRAM 512MBIT PARALLEL 60FBGA

Supplier's Site
Integrated Circuits (ICs) - Memory - Memory - MT46V32M16BN-75 L:C - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT46V32M16BN-75 L:C
Integrated Circuits (ICs) - Memory - Memory MT46V32M16BN-75 L:C
IC DRAM 512MBIT PARALLEL 60FBGA

IC DRAM 512MBIT PARALLEL 60FBGA

Supplier's Site
Memory - MT46V32M16BN-75 L:C - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR Memory IC 512Mbit Parallel 133 MHz 750 ps 60-FBGA (10x12.5)

SDRAM - DDR Memory IC 512Mbit Parallel 133 MHz 750 ps 60-FBGA (10x12.5)

Buy Now

Technical Specifications

  Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT46V32M16BN-75 L:C MT46V32M16BN-75 L:C MT46V32M16BN-75 L:C
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Access Time 0.7500 ns 0.7500 ns
Density 512000 kbits 512000 kbits 512000 kbits
Cycle Time 0.7500 ns
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882525 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Bits per Word 8 bits
Pins 8
View Details
Memory - SMJ44400 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 80 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 16-3507-01-T - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers