Micron Technology, Inc. Memory MT46H32M16LFBF-6 AIT:C TR

Description
SDRAM - Mobile LPDDR Memory IC 512Mb (32M x 16) Parallel 166MHz 5ns 60-VFBGA (8x9)
Request a Quote Datasheet
Description
SDRAM - Mobile LPDDR Memory IC 512Mb (32M x 16) Parallel 166MHz 5ns 60-VFBGA (8x9)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MT46H32M16LFBF-6AIT:CTR-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - Mobile LPDDR Memory IC 512Mb (32M x 16) Parallel 166MHz 5ns 60-VFBGA (8x9)

SDRAM - Mobile LPDDR Memory IC 512Mb (32M x 16) Parallel 166MHz 5ns 60-VFBGA (8x9)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - MT46H32M16LFBF-6 AIT:C TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT46H32M16LFBF-6 AIT:C TR
Integrated Circuits (ICs) - Memory - Memory MT46H32M16LFBF-6 AIT:C TR
IC DRAM 512MBIT PAR 60VFBGA

IC DRAM 512MBIT PAR 60VFBGA

Supplier's Site
SDRAM - Mobile LPDDR Memory IC 512Mbit Parallel 166 MHz 5 ns 60-VFBGA (8x9)

SDRAM - Mobile LPDDR Memory IC 512Mbit Parallel 166 MHz 5 ns 60-VFBGA (8x9)

Buy Now Datasheet
IC DRAM 512MBIT PARALLEL 60VFBGA

IC DRAM 512MBIT PARALLEL 60VFBGA

Supplier's Site Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number MT46H32M16LFBF-6AIT:CTR-ND MT46H32M16LFBF-6 AIT:C TR MT46H32M16LFBF-6 AIT:C TR MT46H32M16LFBF-6 AIT:C TR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 512000 kbits 512000 kbits 512000 kbits 512000 kbits
Package Type 60-VFBGA BGA BGA; 60-VFBGA
Unlock Full Specs
to access all available technical data

Similar Products

Logic - FIFOs Memory - 67C4013-10NL - Lingto Electronic Limited
Specs
Data Rate 10 MHz
Operating Current 35 mA
View Details
Memory - AS8E128K32 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category EEPROM; EEPROM
Access Time 250 to 300 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 28294110 A - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details