IC DRAM 256MBIT PARALLEL 60FBGA Product overview: MT46V16M16CY-5B IT:M from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT46V16M16CY-5B IT:M can be used for catalog matching and distributor lookup.
SDRAM - DDR Memory IC 256Mb (16M x 16) Parallel 200MHz 700ps 60-FBGA (8x12.5)
Manufacturer: Micron Technology Inc.
Packaging: Tray
Mounting: SMD (SMT)
Technology: SDRAM - DDR
Memory Type: Volatile
Memory Size: 256Mb (16M x 16)
Access Time: 700ps
Family Name: MT46V16M16
Categories: Integrated Circuits
Status: Active
Temperature Range - Operating: -40°C to 85°C (TA)
Case / Package: 60-FBGA (8x12.5)
Supply Voltage - Operating: 2.5 V to 2.7 V
Memory Format: DRAM
Max Frequency: 200MHz
Alternative Parts (Cross-Reference): MT46V16M16CV-5BAIT:M
Introduction Date: March 06, 2000
ECCN: EAR99
Country of Origin: Singapore
Estimated EOL Date: 2025
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Limited
SDRAM - DDR Memory IC 256Mbit Parallel 200 MHz 700 ps 60-FBGA (8x12.5)
IC DRAM 256MBIT PARALLEL 60FBGA
IC DRAM 256MBIT PARALLEL 60FBGA
DRAM, 16M X 16BIT, -40 TO 85DEG C; DRAM Type:DDR; DRAM Density:256Mbit; DRAM Memory Configuration:16M x 16bit; Clock Frequency:200MHz; Memory Case Style:FBGA; No. of Pins:60Pins; Supply Voltage Nom:2.5V; Access Time:5ns RoHS Compliant: Yes
IC DRAM 256MBIT PARALLEL 60FBGA
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Quarktwin Technology Ltd. | Lingto Electronic Limited | ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-MT46V16M16CY-5B IT:M | 557-1598-ND | MT46V16M16CY-5B IT:M | MT46V16M16CY-5B IT:M | MT46V16M16CY-5B IT:M | 80AH8102 | MT46V16M16CY-5B IT:M | |
| Product Name | Memory IC and Storage Component | Memory | Memory - SDRAM - MT46V16M16CY-5B IT:M | Memory | Memory | Memory | Dram, 16M X 16Bit, -40 To 85Deg C; Dram Type Micron | Integrated Circuits (ICs) - Memory - Memory |
| Memory Category | Volatile; DRAM Chip | DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip | SDRAM - DDR; DRAM Chip | DRAM Chip | Volatile; DRAM Chip |
| Access Time | 0.7000 ns | 0.7000 ns | 0.7000 ns | 0.7000 ns | 0.7000 ns | 5 ns | ||
| Cycle Time | 15 ns | 15 ns | ||||||
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | |||
| Density | 256000 kbits | 256000 kbits | 256000 kbits | 256000 kbits | 256000 kbits | 256000 kbits | 256000 kbits |
