IC DRAM 8GBIT PARALLEL 168TFBGA Product overview: MT46H256M32L4SA-48 WT:C from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT46H256M32L4SA-
Series: *
Categories: Memory
SDRAM - Mobile LPDDR Memory IC 8Gbit Parallel 208 MHz 5 ns 168-TFBGA (12x12)
IC DRAM 8GBIT PARALLEL 168TFBGA
IC DRAM 8GBIT PARALLEL 168TFBGA
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Quarktwin Technology Ltd. | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-MT46H256M32L4SA-48 WT:C | MT46H256M32L4SA-48 WT:C | MT46H256M32L4SA-48 WT:C | MT46H256M32L4SA-48 WT:C | |
| Product Name | Memory IC and Storage Component | Memory - DDR - MT46H256M32L4SA-48 WT:C | Memory | Memory | Integrated Circuits (ICs) - Memory - Memory |
| Memory Category | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | |
| Access Time | 5 ns | 5 ns | 5 ns | ||
| Cycle Time | 14.4 ns | 14.4 ns | |||
| Operating Temperature | -25 to 85 C (-13 to 185 F) | -25 to 85 C (-13 to 185 F) | |||
| Density | 8000000 kbits | 8000000 kbits | 8000000 kbits | 8000000 kbits |
