The MT46H128M16LFDD-48 AIT:C is a 2Gb automotive LPDDR SDRAM memory device featuring a configuration of 128 Meg x 16 with four internal banks. It operates at a voltage range of 1.70V to 1.95V and supports a clock rate of 208 MHz with a cycle time of 4.8 ns at a CAS latency of 3. The device is designed for automotive applications, with an operating temperature range from -40°C to +105°C. It includes features such as bidirectional data strobes, programmable burst lengths, and support for auto refresh and self-refresh modes. The memory is packaged in a 60-ball VFBGA format, measuring 8mm x 9mm, and is compliant with JEDEC standards. This product is suitable for applications requiring reliable performance in automotive environments.
IC DRAM 2GBIT PAR 208MHZ 60VFBGA Product overview: MT46H128M16LFDD-48 AIT:C from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 208MHZ. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 208MHZ, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT46H128M16LFDD-
SDRAM - Mobile LPDDR Memory IC 2Gb (128M x 16) Parallel 208MHz 5ns 60-VFBGA (8x9)
Manufacturer: Micron Technology Inc.
Series: Automotive, AEC-Q100
Operating Temperature Range: -40°C ~ 85°C (TA)
Features: SDRAM - Mobile LPDDR Memory IC 2Gb (128M x 16) Parallel 208 MHz 5 ns 60-VFBGA (8x9)
Package: Bulk
Package: 60-VFBGA
Mounting: Surface Mount
Family Name: MT46H128M16
Categories: Integrated Circuits (ICs)
Case / Package: 60-VFBGA (8x9)
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance
Quantity per package: 1782
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0036
SDRAM - Mobile LPDDR Memory IC 2Gbit Parallel 208 MHz 5 ns 60-VFBGA (8x9)
IC DRAM 2GBIT PARALLEL 60VFBGA
IC DRAM 2GBIT PAR 208MHZ 60VFBGA
DRAM, 128M X 16BIT, -40 TO 85DEG C; DRAM Type:LPDDR; DRAM Density:2Gbit; DRAM Memory Configuration:128M x 16bit; Clock Frequency:208MHz; Memory Case Style:VFBGA; No. of Pins:60Pins; Supply Voltage Nom:1.8V; Access Time:4.8ns RoHS Compliant: Yes
IC DRAM 2GBIT PARALLEL 60VFBGA
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Quarktwin Technology Ltd. | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Lingto Electronic Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-MT46H128M16LFDD-48 AIT:C | MT46H128M16LFDD-48AIT:C-ND | MT46H128M16LFDD-48 AIT:C | MT46H128M16LFDD-48 AIT:C | MT46H128M16LFDD-48 AIT:C | 80AH8080 | MT46H128M16LFDD-48 AIT:C | |
| Product Name | 208MHZ Memory IC and Storage Component | Memory | Memory - SDRAM - MT46H128M16LFDD-48 AIT:C | Memory | Memory | Integrated Circuits (ICs) - Memory - Memory | Dram, 128M X 16Bit, -40 To 85Deg C; Dram Type Micron | Memory |
| Memory Category | Volatile; DRAM Chip | DRAM Chip | DRAM Chip | DRAM; DRAM Chip | SDRAM - Mobile LPDDR; DRAM Chip | Volatile; DRAM Chip | DRAM Chip | DRAM; DRAM Chip |
| Access Time | 5 ns | 5 ns | 5 ns | 4.8 ns | 5 ns | |||
| Cycle Time | 14.4 ns | 14.4 ns | ||||||
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | |||
| Package Type | BGA; Bulk | 60-VFBGA | BGA; 60-VFBGA (8x9) | BGA; 60-VFBGA | 60-VFBGA | BGA | VFBGA |
