Micron Technology, Inc. Memory MT46V128M4CY-5B:J TR

Description
SDRAM - DDR Memory IC 512Mbit Parallel 200 MHz 700 ps 60-FBGA (8x10)
Datasheet
Description
SDRAM - DDR Memory IC 512Mbit Parallel 200 MHz 700 ps 60-FBGA (8x10)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MT46V128M4CY-5B:J TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR Memory IC 512Mbit Parallel 200 MHz 700 ps 60-FBGA (8x10)

SDRAM - DDR Memory IC 512Mbit Parallel 200 MHz 700 ps 60-FBGA (8x10)

Buy Now
IC DRAM 512MBIT PARALLEL 60FBGA

IC DRAM 512MBIT PARALLEL 60FBGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number MT46V128M4CY-5B:J TR MT46V128M4CY-5B:J TR
Product Name Memory Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip
Access Time 0.7000 ns 0.7000 ns
Operating Temperature 0 to 70 C (32 to 158 F)
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 28310552 A - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
Flash Memory - 1882540 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Bits per Word 8 bits
Pins 8
View Details