IC DRAM 2GBIT PARALLEL 90VFBGA Product overview: MT46H64M32LFCX-6 WT:B from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT46H64M32LFCX-6
Manufacturer: Micron Technology Inc.
Operating Temperature Range: -25°C ~ 85°C (TA)
Features: SDRAM - Mobile LPDDR Memory IC 2Gb (64M x 32) Parallel 166 MHz 5 ns 90-VFBGA (9x13)
Package: Bulk
Package: 90-VFBGA
Mounting: Surface Mount
Part Status: Obsolete
Family Name: MT46H64M32
Categories: Integrated Circuits (ICs)
Case / Package: 90-VFBGA (9x13)
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 80 pct.
Supply and Demand Status: Limited
Quantity per package: 1000
MSL Level: 3 (168 Hours)
HTSUS: 8542.32.0036
IC DRAM 2GBIT PARALLEL 90VFBGA
IC DRAM 2GBIT PARALLEL 90VFBGA
SDRAM - Mobile LPDDR Memory IC 2Gbit Parallel 166 MHz 5 ns 90-VFBGA (9x13)
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-MT46H64M32LFCX-6 WT:B | MT46H64M32LFCX-6 WT:B | MT46H64M32LFCX-6 WT:B | MT46H64M32LFCX-6 WT:B | |
| Product Name | Memory IC and Storage Component | Memory - SDRAM - MT46H64M32LFCX-6 WT:B | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory |
| Memory Category | Volatile; DRAM Chip | DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip |
| Access Time | 5 ns | 5 ns | 5 ns | ||
| Cycle Time | 15 ns | 15 ns | |||
| Operating Temperature | -25 to 85 C (-13 to 185 F) | -25 to 85 C (-13 to 185 F) | -25 to 85 C (-13 to 185 F) |
