Micron Technology, Inc. Memory MT46V32M16BN-5B:C TR

Description
SDRAM - DDR Memory IC 512Mbit Parallel 200 MHz 700 ps 60-FBGA (10x12.5)
Description
SDRAM - DDR Memory IC 512Mbit Parallel 200 MHz 700 ps 60-FBGA (10x12.5)

Suppliers

Company
Product
Description
Supplier Links
Memory - MT46V32M16BN-5B:C TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR Memory IC 512Mbit Parallel 200 MHz 700 ps 60-FBGA (10x12.5)

SDRAM - DDR Memory IC 512Mbit Parallel 200 MHz 700 ps 60-FBGA (10x12.5)

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IC DRAM 512MBIT PARALLEL 60FBGA

IC DRAM 512MBIT PARALLEL 60FBGA

Supplier's Site
Integrated Circuits (ICs) - Memory - Memory - MT46V32M16BN-5B:C TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT46V32M16BN-5B:C TR
Integrated Circuits (ICs) - Memory - Memory MT46V32M16BN-5B:C TR
IC DRAM 512MBIT PARALLEL 60FBGA

IC DRAM 512MBIT PARALLEL 60FBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT46V32M16BN-5B:C TR MT46V32M16BN-5B:C TR MT46V32M16BN-5B:C TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 0.7000 ns 0.7000 ns
Operating Temperature 0 to 70 C (32 to 158 F)
Density 512000 kbits 512000 kbits 512000 kbits
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