IC DRAM 8GBIT PARALLEL 168TFBGA Product overview: MT46H256M32L4LE-48 WT:C from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT46H256M32L4LE-
Manufacturer: Micron Technology Inc.
Packaging: Tray
Mounting Style: SMD
Technology: SDRAM - Mobile LPDDR
Memory Type: Volatile
Memory Size: 8Gb (256M x 32)
Access Time: 5.0ns
Categories: Integrated Circuits
Supplier Device Package: 168-TFBGA (12x12)
Status: Obsolete
Temperature Range - Operating: -25°C ~ 85°C
Memory Format: DRAM
Clock Frequency: 208MHz
Write Cycle Time - Word, Page: 14.4ns
Memory Interface: Parallel
Manufacturer Package: 168-TBGA
Popularity: Low
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1,008
MSL Level: 3 (168 Hours)
Supply Voltage (V): 1.7V ~ 1.95V
SDRAM - Mobile LPDDR Memory IC 8Gbit Parallel 208 MHz 5 ns 168-TFBGA (12x12)
IC DRAM 8GBIT PARALLEL 168TFBGA
IC DRAM 8GBIT PARALLEL 168TFBGA
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | |
|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-MT46H256M32L4LE-48 WT:C | MT46H256M32L4LE-48 WT:C | MT46H256M32L4LE-48 WT:C | MT46H256M32L4LE-48 WT:C | |
| Product Name | Memory IC and Storage Component | Memory - SDRAM - MT46H256M32L4LE-48 WT:C | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory |
| Memory Category | Volatile; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip |
| Access Time | 5 ns | 5 ns | 5 ns | 5 ns | |
| Cycle Time | 14.4 ns | 14.4 ns | 14.4 ns | ||
| Operating Temperature | -25 to 85 C (-13 to 185 F) | -25 to 85 C (-13 to 185 F) | -25 to 85 C (-13 to 185 F) |
