Micron Technology, Inc. Integrated Circuits (ICs) - Memory - Memory MT46V32M16BN-75:C TR

Description
IC DRAM 512MBIT PARALLEL 60FBGA
Description
IC DRAM 512MBIT PARALLEL 60FBGA

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - Memory - MT46V32M16BN-75:C TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT46V32M16BN-75:C TR
Integrated Circuits (ICs) - Memory - Memory MT46V32M16BN-75:C TR
IC DRAM 512MBIT PARALLEL 60FBGA

IC DRAM 512MBIT PARALLEL 60FBGA

Supplier's Site
IC DRAM 512MBIT PARALLEL 60FBGA

IC DRAM 512MBIT PARALLEL 60FBGA

Supplier's Site
Memory - MT46V32M16BN-75:C TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR Memory IC 512Mbit Parallel 133 MHz 750 ps 60-FBGA (10x12.5)

SDRAM - DDR Memory IC 512Mbit Parallel 133 MHz 750 ps 60-FBGA (10x12.5)

Buy Now

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT46V32M16BN-75:C TR MT46V32M16BN-75:C TR MT46V32M16BN-75:C TR
Product Name Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Cycle Time 0.7500 ns
Density 512000 kbits 512000 kbits 512000 kbits
Supply Voltage Surface Mount 2.3V ~ 2.7V
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS5SP256K36 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SSRAM; SRAM Chip
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 2048 kbits
View Details
Memory - 949587-9970 - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers