IC DRAM 512MBIT PAR 60FBGA Product overview: MT46V128M4BN-6:D from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory IC Chips. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2020-MT46V128M4BN-6:
Series: *
Categories: Memory
SDRAM - DDR Memory IC 512Mbit Parallel 167 MHz 700 ps 60-FBGA (10x12.5)
IC DRAM 512MBIT PARALLEL 60FBGA
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Quarktwin Technology Ltd. | Lingto Electronic Limited | |
|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 2020-MT46V128M4BN-6:D | MT46V128M4BN-6:D | MT46V128M4BN-6:D | |
| Product Name | Memory IC and Storage Component | Memory - DDR - MT46V128M4BN-6:D | Memory | Memory |
| Memory Category | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip | |
| Access Time | 0.7000 ns | 0.7000 ns | 0.7000 ns | |
| Cycle Time | 15 ns | |||
| Operating Temperature | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) |
