IC DRAM 512MBIT PAR 60VFBGA Product overview: MT46H32M16LFBF-6 AT:C from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT46H32M16LFBF-6
Manufacturer: Micron Technology Inc.
Packaging: Tube
Operating Temperature Range: -40°C ~ 105°C (TA)
Package: 60-VFBGA
Mounting: SMD
Technology: SDRAM - Mobile LPDDR
Operating Supply Voltage: 1.7 V ~ 1.95 V
Memory Type: Volatile
Memory Size: 512Mb (32M x 16)
Access Time: 5.0ns
Family Name: MT46H32M16
Categories: Integrated Circuits (ICs)
Memory Format: DRAM
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Manufacturer Package: 60-VFBGA (8x9)
Alternative Parts (Cross-Reference): AS4C32M16MD1-5BCN; K4H511638J-BPB3; K4H511638J-BICC; K4H511638J-BCCC;
Introduction Date: September 26, 2005
ECCN: EAR99
Estimated EOL Date: 2025
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Limited
SDRAM - Mobile LPDDR Memory IC 512Mb (32M x 16) Parallel 166MHz 5ns 60-VFBGA (8x9)
IC DRAM 512MBIT PARALLEL 60VFBGA
SDRAM - Mobile LPDDR Memory IC 512Mbit Parallel 166 MHz 5 ns 60-VFBGA (8x9)
DRAM, 32M X 16BIT, -40 TO 105DEG C; DRAM Type:LPDDR; DRAM Density:512Mbit; DRAM Memory Configuration:32M x 16bit; Clock Frequency:166MHz; Memory Case Style:VFBGA; No. of Pins:60Pins; Supply Voltage Nom:1.8V; Access Time:6ns RoHS Compliant: Yes
IC DRAM 512MBIT PAR 60VFBGA
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Lingto Electronic Limited | Quarktwin Technology Ltd. | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-MT46H32M16LFBF-6 AT:C | MT46H32M16LFBF-6AT:C-ND | MT46H32M16LFBF-6 AT:C | MT46H32M16LFBF-6 AT:C | 80AH8091 | MT46H32M16LFBF-6 AT:C | |
| Product Name | Memory IC and Storage Component | Memory - SDRAM - MT46H32M16LFBF-6 AT:C | Memory | Memory | Memory | Dram, 32M X 16Bit, -40 To 105Deg C; Dram Type Micron | Integrated Circuits (ICs) - Memory - Memory |
| Memory Category | Volatile; DRAM Chip | Volatile; DRAM Chip | DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip | DRAM Chip | Volatile; DRAM Chip |
| Access Time | 5 ns | 5 ns | 5 ns | 5 ns | 6 ns | ||
| Cycle Time | 15 ns | 15 ns | 15 ns | ||||
| Operating Temperature | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | |||
| Package Type | BGA; Tube | 60-VFBGA | BGA; 60-VFBGA | VFBGA |
