Micron Technology, Inc. Memory - SDRAM - MT46H32M16LFBF-6 AT:C MT46H32M16LFBF-6 AT:C

Description
Manufacturer: Micron Technology Inc. Packaging: Tube Operating Temperature Range: -40°C ~ 105°C (TA) Package: 60-VFBGA Mounting: SMD Technology: SDRAM - Mobile LPDDR Operating Supply Voltage: 1.7 V ~ 1.95 V Memory Type: Volatile Memory Size: 512Mb (32M x 16) Access Time: 5.0ns Family Name: MT46H32M16 Categories: Integrated Circuits (ICs) Memory Format: DRAM Clock Frequency: 166MHz Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Manufacturer Package: 60-VFBGA (8x9) Alternative Parts (Cross-Reference): AS4C32M16MD1-5BCN; K4H511638J-BPB3; K4H511638J-BICC; K4H511638J-BCCC; Introduction Date: September 26, 2005 ECCN: EAR99 Estimated EOL Date: 2025 Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Micron Technology Inc. Packaging: Tube Operating Temperature Range: -40°C ~ 105°C (TA) Package: 60-VFBGA Mounting: SMD Technology: SDRAM - Mobile LPDDR Operating Supply Voltage: 1.7 V ~ 1.95 V Memory Type: Volatile Memory Size: 512Mb (32M x 16) Access Time: 5.0ns Family Name: MT46H32M16 Categories: Integrated Circuits (ICs) Memory Format: DRAM Clock Frequency: 166MHz Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Manufacturer Package: 60-VFBGA (8x9) Alternative Parts (Cross-Reference): AS4C32M16MD1-5BCN; K4H511638J-BPB3; K4H511638J-BICC; K4H511638J-BCCC; Introduction Date: September 26, 2005 ECCN: EAR99 Estimated EOL Date: 2025 Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Limited
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Suppliers

Company
Product
Description
Supplier Links
Memory - SDRAM - MT46H32M16LFBF-6 AT:C -  - Win Source Electronics
Laguna Hills, CA, United States
Memory - SDRAM - MT46H32M16LFBF-6 AT:C
Memory - SDRAM - MT46H32M16LFBF-6 AT:C
Manufacturer: Micron Technology Inc. Packaging: Tube Operating Temperature Range: -40°C ~ 105°C (TA) Package: 60-VFBGA Mounting: SMD Technology: SDRAM - Mobile LPDDR Operating Supply Voltage: 1.7 V ~ 1.95 V Memory Type: Volatile Memory Size: 512Mb (32M x 16) Access Time: 5.0ns Family Name: MT46H32M16 Categories: Integrated Circuits (ICs) Memory Format: DRAM Clock Frequency: 166MHz Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Manufacturer Package: 60-VFBGA (8x9) Alternative Parts (Cross-Reference): AS4C32M16MD1-5BCN; K4H511638J-BPB3; K4H511638J-BICC; K4H511638J-BCCC; Introduction Date: September 26, 2005 ECCN: EAR99 Estimated EOL Date: 2025 Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Limited

Manufacturer: Micron Technology Inc.
Packaging: Tube
Operating Temperature Range: -40°C ~ 105°C (TA)
Package: 60-VFBGA
Mounting: SMD
Technology: SDRAM - Mobile LPDDR
Operating Supply Voltage: 1.7 V ~ 1.95 V
Memory Type: Volatile
Memory Size: 512Mb (32M x 16)
Access Time: 5.0ns
Family Name: MT46H32M16
Categories: Integrated Circuits (ICs)
Memory Format: DRAM
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Manufacturer Package: 60-VFBGA (8x9)
Alternative Parts (Cross-Reference): AS4C32M16MD1-5BCN; K4H511638J-BPB3; K4H511638J-BICC; K4H511638J-BCCC;
Introduction Date: September 26, 2005
ECCN: EAR99
Estimated EOL Date: 2025
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Memory - MT46H32M16LFBF-6AT:C-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - Mobile LPDDR Memory IC 512Mb (32M x 16) Parallel 166MHz 5ns 60-VFBGA (8x9)

SDRAM - Mobile LPDDR Memory IC 512Mb (32M x 16) Parallel 166MHz 5ns 60-VFBGA (8x9)

Buy Now Datasheet
Dram, 32M X 16Bit, -40 To 105Deg C; Dram Type Micron - 80AH8091 - Newark, An Avnet Company
Chicago, IL, United States
Dram, 32M X 16Bit, -40 To 105Deg C; Dram Type Micron
80AH8091
Dram, 32M X 16Bit, -40 To 105Deg C; Dram Type Micron 80AH8091
DRAM, 32M X 16BIT, -40 TO 105DEG C; DRAM Type:LPDDR; DRAM Density:512Mbit; DRAM Memory Configuration:32M x 16bit; Clock Frequency:166MHz; Memory Case Style:VFBGA; No. of Pins:60Pins; Supply Voltage Nom:1.8V; Access Time:6ns RoHS Compliant: Yes

DRAM, 32M X 16BIT, -40 TO 105DEG C; DRAM Type:LPDDR; DRAM Density:512Mbit; DRAM Memory Configuration:32M x 16bit; Clock Frequency:166MHz; Memory Case Style:VFBGA; No. of Pins:60Pins; Supply Voltage Nom:1.8V; Access Time:6ns RoHS Compliant: Yes

Supplier's Site Datasheet
IC DRAM 512MBIT PARALLEL 60VFBGA

IC DRAM 512MBIT PARALLEL 60VFBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - MT46H32M16LFBF-6 AT:C - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT46H32M16LFBF-6 AT:C
Integrated Circuits (ICs) - Memory - Memory MT46H32M16LFBF-6 AT:C
IC DRAM 512MBIT PAR 60VFBGA

IC DRAM 512MBIT PAR 60VFBGA

Supplier's Site
SDRAM - Mobile LPDDR Memory IC 512Mbit Parallel 166 MHz 5 ns 60-VFBGA (8x9)

SDRAM - Mobile LPDDR Memory IC 512Mbit Parallel 166 MHz 5 ns 60-VFBGA (8x9)

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey Newark, An Avnet Company Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number MT46H32M16LFBF-6AT:C-ND 80AH8091 MT46H32M16LFBF-6 AT:C MT46H32M16LFBF-6 AT:C MT46H32M16LFBF-6 AT:C
Product Name Memory - SDRAM - MT46H32M16LFBF-6 AT:C Memory Dram, 32M X 16Bit, -40 To 105Deg C; Dram Type Micron Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Volatile; DRAM Chip DRAM Chip DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Access Time 5 ns 6 ns 5 ns 5 ns
Cycle Time 15 ns 15 ns
Operating Temperature -40 to 105 C (-40 to 221 F) -40 to 105 C (-40 to 221 F) -40 to 105 C (-40 to 221 F)
Supply Voltage 1.7 V ~ 1.95 V 1.7V ~ 1.95V Surface Mount 1.7V ~ 1.95V
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