Micron Technology, Inc. Memory MT46V32M16BN-6:C

Description
IC DRAM 512MBIT PARALLEL 60FBGA
Datasheet
Description
IC DRAM 512MBIT PARALLEL 60FBGA
Datasheet

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Product
Description
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IC DRAM 512MBIT PARALLEL 60FBGA

IC DRAM 512MBIT PARALLEL 60FBGA

Supplier's Site Datasheet
Memory - MT46V32M16BN-6:C - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR Memory IC 512Mbit Parallel 167 MHz 700 ps 60-FBGA (10x12.5)

SDRAM - DDR Memory IC 512Mbit Parallel 167 MHz 700 ps 60-FBGA (10x12.5)

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Integrated Circuits (ICs) - Memory - Memory - MT46V32M16BN-6:C - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT46V32M16BN-6:C
Integrated Circuits (ICs) - Memory - Memory MT46V32M16BN-6:C
IC DRAM 512MBIT PAR 60FBGA

IC DRAM 512MBIT PAR 60FBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT46V32M16BN-6:C MT46V32M16BN-6:C MT46V32M16BN-6:C
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 0.7000 ns 0.7000 ns
Density 512000 kbits 512000 kbits 512000 kbits
Operating Temperature 0 to 70 C (32 to 158 F)
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