Micron Technology, Inc. Integrated Circuits (ICs) - Memory - Memory MT46V32M16BN-6:C

Description
IC DRAM 512MBIT PAR 60FBGA
Datasheet
Description
IC DRAM 512MBIT PAR 60FBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - Memory - MT46V32M16BN-6:C - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT46V32M16BN-6:C
Integrated Circuits (ICs) - Memory - Memory MT46V32M16BN-6:C
IC DRAM 512MBIT PAR 60FBGA

IC DRAM 512MBIT PAR 60FBGA

Supplier's Site
Memory - MT46V32M16BN-6:C - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR Memory IC 512Mbit Parallel 167 MHz 700 ps 60-FBGA (10x12.5)

SDRAM - DDR Memory IC 512Mbit Parallel 167 MHz 700 ps 60-FBGA (10x12.5)

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IC DRAM 512MBIT PARALLEL 60FBGA

IC DRAM 512MBIT PARALLEL 60FBGA

Supplier's Site Datasheet

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT46V32M16BN-6:C MT46V32M16BN-6:C MT46V32M16BN-6:C
Product Name Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Cycle Time 0.7000 ns
Density 512000 kbits 512000 kbits 512000 kbits
Supply Voltage Surface Mount 2.3V ~ 2.7V
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