Micron Technology, Inc. Integrated Circuits (ICs) - Memory - Memory MT46V32M16BN-6:C

Description
IC DRAM 512MBIT PAR 60FBGA
Datasheet
Description
IC DRAM 512MBIT PAR 60FBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - Memory - MT46V32M16BN-6:C - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT46V32M16BN-6:C
Integrated Circuits (ICs) - Memory - Memory MT46V32M16BN-6:C
IC DRAM 512MBIT PAR 60FBGA

IC DRAM 512MBIT PAR 60FBGA

Supplier's Site
IC DRAM 512MBIT PARALLEL 60FBGA

IC DRAM 512MBIT PARALLEL 60FBGA

Supplier's Site Datasheet
Memory - MT46V32M16BN-6:C - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR Memory IC 512Mbit Parallel 167 MHz 700 ps 60-FBGA (10x12.5)

SDRAM - DDR Memory IC 512Mbit Parallel 167 MHz 700 ps 60-FBGA (10x12.5)

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Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT46V32M16BN-6:C MT46V32M16BN-6:C MT46V32M16BN-6:C
Product Name Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Cycle Time 0.7000 ns
Density 512000 kbits 512000 kbits 512000 kbits
Supply Voltage Surface Mount 2.3V ~ 2.7V
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