Micron Technology, Inc. Memory - SDRAM - MT46V128M4BN-5B:F MT46V128M4BN-5B:F

Description
Manufacturer: Micron Technology Inc. Packaging: Tray Operating Temperature Range: 0°C ~ 70°C (TA) Package: 60-TFBGA Mounting: SMD Technology: SDRAM - DDR Operating Supply Voltage: 2.5 V ~ 2.7 V Memory Type: Volatile Memory Size: 512Mb (128M x 4) Access Time: 700ps Part Status: Obsolete(EOL) Family Name: MT46V128M4 Categories: Integrated Circuits (ICs) Memory Format: DRAM Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Manufacturer Package: 60-FBGA (10x12.5) Alternative Parts (Cross-Reference): K4H510438J-BCCC; K4H510438F-HCCC; K4H510438J-BLCC; K4H510438J-BPCC; Introduction Date: October 27, 2000 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Micron Technology Inc. Packaging: Tray Operating Temperature Range: 0°C ~ 70°C (TA) Package: 60-TFBGA Mounting: SMD Technology: SDRAM - DDR Operating Supply Voltage: 2.5 V ~ 2.7 V Memory Type: Volatile Memory Size: 512Mb (128M x 4) Access Time: 700ps Part Status: Obsolete(EOL) Family Name: MT46V128M4 Categories: Integrated Circuits (ICs) Memory Format: DRAM Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Manufacturer Package: 60-FBGA (10x12.5) Alternative Parts (Cross-Reference): K4H510438J-BCCC; K4H510438F-HCCC; K4H510438J-BLCC; K4H510438J-BPCC; Introduction Date: October 27, 2000 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
Memory - SDRAM - MT46V128M4BN-5B:F -  - Win Source Electronics
Laguna Hills, CA, United States
Memory - SDRAM - MT46V128M4BN-5B:F
Memory - SDRAM - MT46V128M4BN-5B:F
Manufacturer: Micron Technology Inc. Packaging: Tray Operating Temperature Range: 0°C ~ 70°C (TA) Package: 60-TFBGA Mounting: SMD Technology: SDRAM - DDR Operating Supply Voltage: 2.5 V ~ 2.7 V Memory Type: Volatile Memory Size: 512Mb (128M x 4) Access Time: 700ps Part Status: Obsolete(EOL) Family Name: MT46V128M4 Categories: Integrated Circuits (ICs) Memory Format: DRAM Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Manufacturer Package: 60-FBGA (10x12.5) Alternative Parts (Cross-Reference): K4H510438J-BCCC; K4H510438F-HCCC; K4H510438J-BLCC; K4H510438J-BPCC; Introduction Date: October 27, 2000 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Balance

Manufacturer: Micron Technology Inc.
Packaging: Tray
Operating Temperature Range: 0°C ~ 70°C (TA)
Package: 60-TFBGA
Mounting: SMD
Technology: SDRAM - DDR
Operating Supply Voltage: 2.5 V ~ 2.7 V
Memory Type: Volatile
Memory Size: 512Mb (128M x 4)
Access Time: 700ps
Part Status: Obsolete(EOL)
Family Name: MT46V128M4
Categories: Integrated Circuits (ICs)
Memory Format: DRAM
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Manufacturer Package: 60-FBGA (10x12.5)
Alternative Parts (Cross-Reference): K4H510438J-BCCC; K4H510438F-HCCC; K4H510438J-BLCC; K4H510438J-BPCC;
Introduction Date: October 27, 2000
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
200MHZ 2.6V Memory IC and Storage Component - 774-MT46V128M4BN-5B:F - ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
200MHZ 2.6V Memory IC and Storage Component
774-MT46V128M4BN-5B:F
200MHZ 2.6V Memory IC and Storage Component 774-MT46V128M4BN-5B:F
IC SDRAM 512MBIT 200MHZ 60FBGA / DRAM Chip DDR SDRAM 512Mbit 128Mx4 2.6V 60-Pin FBGA Tray Product overview: MT46V128M4BN-5B:F from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200MHZ, 2.6V. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 200MHZ, 2.6V, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT46V128M4BN-5B: F can be used for catalog matching and distributor lookup.

IC SDRAM 512MBIT 200MHZ 60FBGA / DRAM Chip DDR SDRAM 512Mbit 128Mx4 2.6V 60-Pin FBGA Tray Product overview: MT46V128M4BN-5B:F from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200MHZ, 2.6V. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 200MHZ, 2.6V, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT46V128M4BN-5B:F can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
IC DRAM 512MBIT PARALLEL 60FBGA

IC DRAM 512MBIT PARALLEL 60FBGA

Supplier's Site Datasheet
Memory - MT46V128M4BN-5B:F - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR Memory IC 512Mbit Parallel 200 MHz 700 ps 60-FBGA (10x12.5)

SDRAM - DDR Memory IC 512Mbit Parallel 200 MHz 700 ps 60-FBGA (10x12.5)

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Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 774-MT46V128M4BN-5B:F MT46V128M4BN-5B:F MT46V128M4BN-5B:F
Product Name Memory - SDRAM - MT46V128M4BN-5B:F 200MHZ 2.6V Memory IC and Storage Component Memory Memory
Memory Category Volatile; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Access Time 0.7000 ns 0.7000 ns 0.7000 ns 0.7000 ns
Cycle Time 15 ns 15 ns
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
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