IC DRAM 2GBIT PAR 208MHZ 90VFBGA Product overview: MT46H64M32LFBQ-48 IT:C TR from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 208MHZ. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 208MHZ, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT46H64M32LFBQ-4
Category: Integrated Circuits (ICs) - Memory - Memory
Temperature Range - Operating: -40°C ~ 85°C (TA)
Fake Threat In the Open Market: 58 pct.
MSL Level: 3 (168 Hours)
Mfr: Micron Technology Inc.
Package: Tape & Reel
Product Status: Active
Package / Case: 90-VFBGA
Supplier Device Package: 90-VFBGA (8x13)
Base Product Number: MT46H64M32
Technology: SDRAM - Mobile LPDDR
Mounting Type: Surface Mount
HTSUS: 8542.32.0036
REACH Status: REACH Unaffected
ECCN: EAR99
Voltage - Supply: 1.7V ~ 1.95V
Memory Type: Volatile
Memory Format: DRAM
Memory Size: 2Gbit
Memory Organization: 64M x 32
Memory Interface: Parallel
Clock Frequency: 208 MHz
Write Cycle Time - Word, Page: 14.4ns
Access Time: 5 ns
IC DRAM 2GBIT PARALLEL 90VFBGA
IC DRAM 2GBIT PAR 208MHZ 90VFBGA
SDRAM - Mobile LPDDR Memory IC 2Gbit Parallel 208 MHz 5 ns 90-VFBGA (8x13)
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-MT46H64M32LFBQ-48 IT:C TR | MT46H64M32LFBQ-48 IT:C TR | MT46H64M32LFBQ-48 IT:C TR | MT46H64M32LFBQ-48 IT:C TR | |
| Product Name | 208MHZ Memory IC and Storage Component | Integrated Circuits (ICs) - Memory - Memory | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory |
| Memory Category | Volatile; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip |
| Access Time | 5 ns | 5 ns | 5 ns | 5 ns | |
| Cycle Time | 14.4 ns | 14.4 ns | 5 ns | ||
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | ||
| Density | 2000000 kbits | 2000000 kbits | 2000000 kbits | 2000000 kbits |
