Micron Technology, Inc. Integrated Circuits (ICs) - Memory - Memory MT46H64M32LFBQ-48 IT:C TR

Description
Category: Integrated Circuits (ICs) - Memory - Memory Temperature Range - Operating: -40°C ~ 85°C (TA) Fake Threat In the Open Market: 58 pct. MSL Level: 3 (168 Hours) Mfr: Micron Technology Inc. Package: Tape & Reel Product Status: Active Package / Case: 90-VFBGA Supplier Device Package: 90-VFBGA (8x13) Base Product Number: MT46H64M32 Technology: SDRAM - Mobile LPDDR Mounting Type: Surface Mount HTSUS: 8542.32.0036 REACH Status: REACH Unaffected ECCN: EAR99 Voltage - Supply: 1.7V ~ 1.95V Memory Type: Volatile Memory Format: DRAM Memory Size: 2Gbit Memory Organization: 64M x 32 Memory Interface: Parallel Clock Frequency: 208 MHz Write Cycle Time - Word, Page: 14.4ns Access Time: 5 ns
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Description
Category: Integrated Circuits (ICs) - Memory - Memory Temperature Range - Operating: -40°C ~ 85°C (TA) Fake Threat In the Open Market: 58 pct. MSL Level: 3 (168 Hours) Mfr: Micron Technology Inc. Package: Tape & Reel Product Status: Active Package / Case: 90-VFBGA Supplier Device Package: 90-VFBGA (8x13) Base Product Number: MT46H64M32 Technology: SDRAM - Mobile LPDDR Mounting Type: Surface Mount HTSUS: 8542.32.0036 REACH Status: REACH Unaffected ECCN: EAR99 Voltage - Supply: 1.7V ~ 1.95V Memory Type: Volatile Memory Format: DRAM Memory Size: 2Gbit Memory Organization: 64M x 32 Memory Interface: Parallel Clock Frequency: 208 MHz Write Cycle Time - Word, Page: 14.4ns Access Time: 5 ns
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Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - Memory -  - Win Source Electronics
Laguna Hills, CA, United States
Integrated Circuits (ICs) - Memory - Memory
Integrated Circuits (ICs) - Memory - Memory
Category: Integrated Circuits (ICs) - Memory - Memory Temperature Range - Operating: -40°C ~ 85°C (TA) Fake Threat In the Open Market: 58 pct. MSL Level: 3 (168 Hours) Mfr: Micron Technology Inc. Package: Tape & Reel Product Status: Active Package / Case: 90-VFBGA Supplier Device Package: 90-VFBGA (8x13) Base Product Number: MT46H64M32 Technology: SDRAM - Mobile LPDDR Mounting Type: Surface Mount HTSUS: 8542.32.0036 REACH Status: REACH Unaffected ECCN: EAR99 Voltage - Supply: 1.7V ~ 1.95V Memory Type: Volatile Memory Format: DRAM Memory Size: 2Gbit Memory Organization: 64M x 32 Memory Interface: Parallel Clock Frequency: 208 MHz Write Cycle Time - Word, Page: 14.4ns Access Time: 5 ns

Category: Integrated Circuits (ICs) - Memory - Memory
Temperature Range - Operating: -40°C ~ 85°C (TA)
Fake Threat In the Open Market: 58 pct.
MSL Level: 3 (168 Hours)
Mfr: Micron Technology Inc.
Package: Tape & Reel
Product Status: Active
Package / Case: 90-VFBGA
Supplier Device Package: 90-VFBGA (8x13)
Base Product Number: MT46H64M32
Technology: SDRAM - Mobile LPDDR
Mounting Type: Surface Mount
HTSUS: 8542.32.0036
REACH Status: REACH Unaffected
ECCN: EAR99
Voltage - Supply: 1.7V ~ 1.95V
Memory Type: Volatile
Memory Format: DRAM
Memory Size: 2Gbit
Memory Organization: 64M x 32
Memory Interface: Parallel
Clock Frequency: 208 MHz
Write Cycle Time - Word, Page: 14.4ns
Access Time: 5 ns

Buy Now Datasheet
208MHZ Memory IC and Storage Component - 774-MT46H64M32LFBQ-48 IT:C TR - ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
208MHZ Memory IC and Storage Component
774-MT46H64M32LFBQ-48 IT:C TR
208MHZ Memory IC and Storage Component 774-MT46H64M32LFBQ-48 IT:C TR
IC DRAM 2GBIT PAR 208MHZ 90VFBGA Product overview: MT46H64M32LFBQ-48 IT:C TR from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 208MHZ. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 208MHZ, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT46H64M32LFBQ-4 8 IT:C TR can be used for catalog matching and distributor lookup.

IC DRAM 2GBIT PAR 208MHZ 90VFBGA Product overview: MT46H64M32LFBQ-48 IT:C TR from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 208MHZ. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 208MHZ, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT46H64M32LFBQ-48 IT:C TR can be used for catalog matching and distributor lookup.

Supplier's Site
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT46H64M32LFBQ-48 IT:C TR
Integrated Circuits (ICs) - Memory - Memory MT46H64M32LFBQ-48 IT:C TR
IC DRAM 2GBIT PAR 208MHZ 90VFBGA

IC DRAM 2GBIT PAR 208MHZ 90VFBGA

Supplier's Site
SDRAM - Mobile LPDDR Memory IC 2Gbit Parallel 208 MHz 5 ns 90-VFBGA (8x13)

SDRAM - Mobile LPDDR Memory IC 2Gbit Parallel 208 MHz 5 ns 90-VFBGA (8x13)

Buy Now Datasheet
IC DRAM 2GBIT PARALLEL 90VFBGA

IC DRAM 2GBIT PARALLEL 90VFBGA

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 774-MT46H64M32LFBQ-48 IT:C TR MT46H64M32LFBQ-48 IT:C TR MT46H64M32LFBQ-48 IT:C TR MT46H64M32LFBQ-48 IT:C TR
Product Name Integrated Circuits (ICs) - Memory - Memory 208MHZ Memory IC and Storage Component Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Volatile; DRAM Chip Volatile; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Access Time 5 ns 5 ns 5 ns 5 ns
Cycle Time 14.4 ns 14.4 ns 5 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Supply Voltage 1.7V ~ 1.95V 1.7V ~ 1.95V Surface Mount 1.7V ~ 1.95V
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