Micron Technology, Inc. Memory MT46H8M32LFB5-6:A TR

Description
SDRAM - Mobile LPDDR Memory IC 256Mb (8M x 32) Parallel 166MHz 5ns 90-VFBGA (8x13)
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Description
SDRAM - Mobile LPDDR Memory IC 256Mb (8M x 32) Parallel 166MHz 5ns 90-VFBGA (8x13)
Request a Quote
Datasheet
Datasheet Summary
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The MT46H8M32LFB5-6:A TR is a 256Mb Mobile Low-Power DDR SDRAM memory device from Quarktwin Technology Ltd. It features a configuration of 2 Meg x 32 with four internal banks, allowing for concurrent operations. The device operates at a voltage range of 1.70V to 1.95V and supports a differential clock input with commands entered on each positive clock edge. It offers programmable burst lengths of 2, 4, 8, or 16 and includes data masks for write data. The memory supports auto refresh and self-refresh modes, as well as a deep power-down feature for energy efficiency. The device is available in a 90-ball VFBGA package measuring 8mm x 13mm and is suitable for commercial and industrial temperature ranges. The cycle time is specified at 6ns with a CAS latency of 3, operating at a frequency of 166 MHz. This product is designed for applications requiring low power consumption and high performance in mobile devices.

Datasheet Summary
Powered by GS/AI

The MT46H8M32LFB5-6:A TR is a 256Mb Mobile Low-Power DDR SDRAM memory device from Quarktwin Technology Ltd. It features a configuration of 2 Meg x 32 with four internal banks, allowing for concurrent operations. The device operates at a voltage range of 1.70V to 1.95V and supports a differential clock input with commands entered on each positive clock edge. It offers programmable burst lengths of 2, 4, 8, or 16 and includes data masks for write data. The memory supports auto refresh and self-refresh modes, as well as a deep power-down feature for energy efficiency. The device is available in a 90-ball VFBGA package measuring 8mm x 13mm and is suitable for commercial and industrial temperature ranges. The cycle time is specified at 6ns with a CAS latency of 3, operating at a frequency of 166 MHz. This product is designed for applications requiring low power consumption and high performance in mobile devices.

Suppliers

Company
Product
Description
Supplier Links
Memory - 557-1280-2-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - Mobile LPDDR Memory IC 256Mb (8M x 32) Parallel 166MHz 5ns 90-VFBGA (8x13)

SDRAM - Mobile LPDDR Memory IC 256Mb (8M x 32) Parallel 166MHz 5ns 90-VFBGA (8x13)

Buy Now Datasheet
Memory IC and Storage Component - 774-MT46H8M32LFB5-6:A TR - ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
Memory IC and Storage Component
774-MT46H8M32LFB5-6:A TR
Memory IC and Storage Component 774-MT46H8M32LFB5-6:A TR
IC DRAM 256MBIT PAR 90VFBGA Product overview: MT46H8M32LFB5-6:A TR from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT46H8M32LFB5-6: A TR can be used for catalog matching and distributor lookup.

IC DRAM 256MBIT PAR 90VFBGA Product overview: MT46H8M32LFB5-6:A TR from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT46H8M32LFB5-6:A TR can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Memory - SDRAM - MT46H8M32LFB5-6:A TR -  - Win Source Electronics
Laguna Hills, CA, United States
Memory - SDRAM - MT46H8M32LFB5-6:A TR
Memory - SDRAM - MT46H8M32LFB5-6:A TR
Manufacturer: Micron Technology Inc. Operating Temperature Range: 0°C ~ 70°C (TA) Features: SDRAM - Mobile LPDDR Memory IC 256Mb (8M x 32) Parallel 166 MHz 5 ns 90-VFBGA (8x13) Package: Reel - TR Package: 90-VFBGA Mounting: Surface Mount Part Status: Obsolete Family Name: MT46H8M32 Categories: Integrated Circuits (ICs) Case / Package: 90-VFBGA (8x13) ECCN: EAR99 Popularity: High Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance Quantity per package: 1000 MSL Level: 3 (168 Hours) REACH Status: REACH Unaffected HTSUS: 8542.32.0024

Manufacturer: Micron Technology Inc.
Operating Temperature Range: 0°C ~ 70°C (TA)
Features: SDRAM - Mobile LPDDR Memory IC 256Mb (8M x 32) Parallel 166 MHz 5 ns 90-VFBGA (8x13)
Package: Reel - TR
Package: 90-VFBGA
Mounting: Surface Mount
Part Status: Obsolete
Family Name: MT46H8M32
Categories: Integrated Circuits (ICs)
Case / Package: 90-VFBGA (8x13)
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance
Quantity per package: 1000
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0024

Buy Now Datasheet
Memory - MT46H8M32LFB5-6:A TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPDDR Memory IC 256Mbit Parallel 166 MHz 5 ns 90-VFBGA (8x13)

SDRAM - Mobile LPDDR Memory IC 256Mbit Parallel 166 MHz 5 ns 90-VFBGA (8x13)

Buy Now Datasheet
IC DRAM 256MBIT PARALLEL 90VFBGA

IC DRAM 256MBIT PARALLEL 90VFBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - MT46H8M32LFB5-6:A TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT46H8M32LFB5-6:A TR
Integrated Circuits (ICs) - Memory - Memory MT46H8M32LFB5-6:A TR
IC DRAM 256MBIT PAR 90VFBGA

IC DRAM 256MBIT PAR 90VFBGA

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 557-1280-2-ND 774-MT46H8M32LFB5-6:A TR MT46H8M32LFB5-6:A TR MT46H8M32LFB5-6:A TR MT46H8M32LFB5-6:A TR
Product Name Memory Memory IC and Storage Component Memory - SDRAM - MT46H8M32LFB5-6:A TR Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM Chip Volatile; DRAM Chip DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 256000 kbits 256000 kbits 256000 kbits 256000 kbits
Package Type 90-VFBGA BGA; Tape & Reel (TR) BGA; 90-VFBGA (8x13) BGA; 90-VFBGA
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