The MT46H8M32LFB5-6:A TR is a 256Mb Mobile Low-Power DDR SDRAM memory device from Quarktwin Technology Ltd. It features a configuration of 2 Meg x 32 with four internal banks, allowing for concurrent operations. The device operates at a voltage range of 1.70V to 1.95V and supports a differential clock input with commands entered on each positive clock edge. It offers programmable burst lengths of 2, 4, 8, or 16 and includes data masks for write data. The memory supports auto refresh and self-refresh modes, as well as a deep power-down feature for energy efficiency. The device is available in a 90-ball VFBGA package measuring 8mm x 13mm and is suitable for commercial and industrial temperature ranges. The cycle time is specified at 6ns with a CAS latency of 3, operating at a frequency of 166 MHz. This product is designed for applications requiring low power consumption and high performance in mobile devices.
Manufacturer: Micron Technology Inc.
Operating Temperature Range: 0°C ~ 70°C (TA)
Features: SDRAM - Mobile LPDDR Memory IC 256Mb (8M x 32) Parallel 166 MHz 5 ns 90-VFBGA (8x13)
Package: Reel - TR
Package: 90-VFBGA
Mounting: Surface Mount
Part Status: Obsolete
Family Name: MT46H8M32
Categories: Integrated Circuits (ICs)
Case / Package: 90-VFBGA (8x13)
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance
Quantity per package: 1000
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0024
SDRAM - Mobile LPDDR Memory IC 256Mb (8M x 32) Parallel 166MHz 5ns 90-VFBGA (8x13)
IC DRAM 256MBIT PAR 90VFBGA Product overview: MT46H8M32LFB5-6:A TR from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT46H8M32LFB5-6:
IC DRAM 256MBIT PARALLEL 90VFBGA
SDRAM - Mobile LPDDR Memory IC 256Mbit Parallel 166 MHz 5 ns 90-VFBGA (8x13)
IC DRAM 256MBIT PAR 90VFBGA
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Lingto Electronic Limited | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 557-1280-2-ND | 774-MT46H8M32LFB5-6:A TR | MT46H8M32LFB5-6:A TR | MT46H8M32LFB5-6:A TR | MT46H8M32LFB5-6:A TR | |
| Product Name | Memory - SDRAM - MT46H8M32LFB5-6:A TR | Memory | Memory IC and Storage Component | Memory | Memory | Integrated Circuits (ICs) - Memory - Memory |
| Memory Category | DRAM Chip | DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip |
| Operating Temperature | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | ||
| Package Type | BGA; 90-VFBGA (8x13) | 90-VFBGA | BGA; Tape & Reel (TR) | BGA; 90-VFBGA | ||
| Density | 256000 kbits | 256000 kbits | 256000 kbits | 256000 kbits |
