Micron Technology, Inc. Memory MT46V16M16P-5B XIT:M

Description
IC DRAM 256MBIT PARALLEL 66TSOP
Request a Quote Datasheet
Description
IC DRAM 256MBIT PARALLEL 66TSOP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
IC DRAM 256MBIT PARALLEL 66TSOP

IC DRAM 256MBIT PARALLEL 66TSOP

Supplier's Site Datasheet
Memory - MT46V16M16P-5BXIT:M-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - DDR Memory IC 256Mb (16M x 16) Parallel 200MHz 700ps 66-TSOP

SDRAM - DDR Memory IC 256Mb (16M x 16) Parallel 200MHz 700ps 66-TSOP

Buy Now Datasheet
Memory - SDRAM - MT46V16M16P-5B XIT:M -  - Win Source Electronics
Laguna Hills, CA, United States
Memory - SDRAM - MT46V16M16P-5B XIT:M
Memory - SDRAM - MT46V16M16P-5B XIT:M
Manufacturer: Micron Technology Inc. Packaging: Tray Mounting Style: SMD Technology: SDRAM - DDR Memory Type: Volatile Memory Size: 256Mb (16M x 16) Access Time: 700ps Part Status: Last Time Buy Supplier Device Package: 66-TSOP Temperature Range - Operating: -40°C ~ 85°C Memory Format: DRAM Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Manufacturer Package: 66-TSSOP Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1,080 MSL Level: 3 (168 Hours) Supply Voltage (V): 2.5V ~ 2.7V Part Number Series: MT46V16M16

Manufacturer: Micron Technology Inc.
Packaging: Tray
Mounting Style: SMD
Technology: SDRAM - DDR
Memory Type: Volatile
Memory Size: 256Mb (16M x 16)
Access Time: 700ps
Part Status: Last Time Buy
Supplier Device Package: 66-TSOP
Temperature Range - Operating: -40°C ~ 85°C
Memory Format: DRAM
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Manufacturer Package: 66-TSSOP
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1,080
MSL Level: 3 (168 Hours)
Supply Voltage (V): 2.5V ~ 2.7V
Part Number Series: MT46V16M16

Buy Now
Memory - MT46V16M16P-5B XIT:M - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR Memory IC 256Mbit Parallel 200 MHz 700 ps 66-TSOP

SDRAM - DDR Memory IC 256Mbit Parallel 200 MHz 700 ps 66-TSOP

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - MT46V16M16P-5B XIT:M - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT46V16M16P-5B XIT:M
Integrated Circuits (ICs) - Memory - Memory MT46V16M16P-5B XIT:M
IC DRAM 256MBIT PARALLEL 66TSOP

IC DRAM 256MBIT PARALLEL 66TSOP

Supplier's Site
Dram, 16M X 16Bit, -40 To 85Deg C; Dram Type Micron - 80AH8105 - Newark, An Avnet Company
Chicago, IL, United States
Dram, 16M X 16Bit, -40 To 85Deg C; Dram Type Micron
80AH8105
Dram, 16M X 16Bit, -40 To 85Deg C; Dram Type Micron 80AH8105
DRAM, 16M X 16BIT, -40 TO 85DEG C; DRAM Type:DDR; DRAM Density:256Mbit; DRAM Memory Configuration:16M x 16bit; Clock Frequency:200MHz; Memory Case Style:TSOP; No. of Pins:66Pins; Supply Voltage Nom:2.5V; Access Time:5ns RoHS Compliant: Yes

DRAM, 16M X 16BIT, -40 TO 85DEG C; DRAM Type:DDR; DRAM Density:256Mbit; DRAM Memory Configuration:16M x 16bit; Clock Frequency:200MHz; Memory Case Style:TSOP; No. of Pins:66Pins; Supply Voltage Nom:2.5V; Access Time:5ns RoHS Compliant: Yes

Supplier's Site Datasheet
IC DRAM 256MBIT PARALLEL 66TSOP

IC DRAM 256MBIT PARALLEL 66TSOP

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number MT46V16M16P-5B XIT:M MT46V16M16P-5BXIT:M-ND MT46V16M16P-5B XIT:M MT46V16M16P-5B XIT:M 80AH8105 MT46V16M16P-5B XIT:M
Product Name Memory Memory Memory - SDRAM - MT46V16M16P-5B XIT:M Memory Integrated Circuits (ICs) - Memory - Memory Dram, 16M X 16Bit, -40 To 85Deg C; Dram Type Micron Memory
Memory Category SDRAM - DDR; DRAM Chip DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip DRAM Chip DRAM; DRAM Chip
Data Rate 200 MHz 200 MHz
Access Time 0.7000 ns 0.7000 ns 0.7000 ns 5 ns 0.7000 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 256000 kbits 256000 kbits 256000 kbits 256000 kbits 256000 kbits 256000 kbits
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