IC DRAM 256MBIT PARALLEL 66TSOP
IC DRAM 256MBIT PARALLEL 66TSOP Product overview: MT46V16M16P-5B XIT:M from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT46V16M16P-5B XIT:M can be used for catalog matching and distributor lookup.
SDRAM - DDR Memory IC 256Mb (16M x 16) Parallel 200MHz 700ps 66-TSOP
Manufacturer: Micron Technology Inc.
Packaging: Tray
Mounting Style: SMD
Technology: SDRAM - DDR
Memory Type: Volatile
Memory Size: 256Mb (16M x 16)
Access Time: 700ps
Part Status: Last Time Buy
Supplier Device Package: 66-TSOP
Temperature Range - Operating: -40°C ~ 85°C
Memory Format: DRAM
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Manufacturer Package: 66-TSSOP
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1,080
MSL Level: 3 (168 Hours)
Supply Voltage (V): 2.5V ~ 2.7V
Part Number Series: MT46V16M16
DRAM, 16M X 16BIT, -40 TO 85DEG C; DRAM Type:DDR; DRAM Density:256Mbit; DRAM Memory Configuration:16M x 16bit; Clock Frequency:200MHz; Memory Case Style:TSOP; No. of Pins:66Pins; Supply Voltage Nom:2.5V; Access Time:5ns RoHS Compliant: Yes
IC DRAM 256MBIT PARALLEL 66TSOP
IC DRAM 256MBIT PARALLEL 66TSOP
SDRAM - DDR Memory IC 256Mbit Parallel 200 MHz 700 ps 66-TSOP
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Newark, An Avnet Company | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | MT46V16M16P-5B XIT:M | 774-MT46V16M16P-5B XIT:M | MT46V16M16P-5BXIT:M-ND | 80AH8105 | MT46V16M16P-5B XIT:M | MT46V16M16P-5B XIT:M | MT46V16M16P-5B XIT:M | |
| Product Name | Memory | Memory IC and Storage Component | Memory | Memory - SDRAM - MT46V16M16P-5B XIT:M | Dram, 16M X 16Bit, -40 To 85Deg C; Dram Type Micron | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory |
| Memory Category | SDRAM - DDR; DRAM Chip | Volatile; DRAM Chip | DRAM Chip | Volatile; DRAM Chip | DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip |
| Data Rate | 200 MHz | 200 MHz | ||||||
| Access Time | 0.7000 ns | 0.7000 ns | 0.7000 ns | 5 ns | 0.7000 ns | 0.7000 ns | ||
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | |||
| Density | 256000 kbits | 256000 kbits | 256000 kbits | 256000 kbits | 256000 kbits | 256000 kbits |
