IC DRAM 1GBIT PARALLEL 90VFBGA
SDRAM - Mobile LPDDR Memory IC 1Gb (32M x 32) Parallel 200MHz 5ns 90-VFBGA (8x13)
IC DRAM 1GBIT PARALLEL 90VFBGA Product overview: MT46H32M32LFB5-5 AAT:B from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT46H32M32LFB5-5
Manufacturer: Micron Technology Inc.
Series: Automotive, AEC-Q100
Operating Temperature Range: -40°C ~ 105°C (TA)
Features: SDRAM - Mobile LPDDR Memory IC 1Gb (32M x 32) Parallel 200 MHz 5 ns 90-VFBGA (8x13)
Package: Bulk
Package: 90-VFBGA
Mounting: Surface Mount
Family Name: MT46H32M32
Categories: Integrated Circuits (ICs)
Case / Package: 90-VFBGA (8x13)
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Limited
Quantity per package: 1440
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0036
DRAM, 32M X 32BIT, -40 TO 105DEG C; DRAM Type:LPDDR; DRAM Density:1Gbit; DRAM Memory Configuration:32M x 32bit; Clock Frequency:200MHz; Memory Case Style:VFBGA; No. of Pins:90Pins; Supply Voltage Nom:1.8V; Access Time:5ns RoHS Compliant: Yes
IC DRAM 1GBIT PARALLEL 90VFBGA
IC DRAM 1GBIT PARALLEL 90VFBGA
SDRAM - Mobile LPDDR Memory IC 1Gbit Parallel 200 MHz 5 ns 90-VFBGA (8x13)
| ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | MT46H32M32LFB5-5 AAT:B | MT46H32M32LFB5-5AAT:B-ND | 774-MT46H32M32LFB5-5 AAT:B | 80AH8092 | MT46H32M32LFB5-5 AAT:B | MT46H32M32LFB5-5 AAT:B | MT46H32M32LFB5-5 AAT:B | |
| Product Name | Memory | Memory | Memory IC and Storage Component | Memory - SDRAM - MT46H32M32LFB5-5 AAT:B | Dram, 32M X 32Bit, -40 To 105Deg C; Dram Type Micron | Integrated Circuits (ICs) - Memory - Memory | Memory | Memory |
| Memory Category | SDRAM - Mobile LPDDR; DRAM Chip | DRAM Chip | Volatile; DRAM Chip | DRAM Chip | DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip |
| Data Rate | 200 MHz | 200 MHz | 200 MHz | |||||
| Access Time | 5 ns | 5 ns | 5 ns | 5 ns | 5 ns | |||
| Operating Temperature | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | |||
| Density | 1000000 kbits | 1000000 kbits | 1000000 kbits | 1000000 kbits | 1000000 kbits |
