IC DRAM 512MBIT PARALLEL 60FBGA
IC DRAM 512MBIT PARALLEL 60FBGA
SDRAM - DDR Memory IC 512Mbit Parallel 200 MHz 700 ps 60-FBGA (10x12.5)
| Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips |
| Product Number | MT46V32M16BN-5B:C | MT46V32M16BN-5B:C | MT46V32M16BN-5B:C |
| Product Name | Integrated Circuits (ICs) - Memory - Memory | Memory | Memory |
| Memory Category | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip |
| Cycle Time | 0.7000 ns | ||
| Density | 512000 kbits | 512000 kbits | 512000 kbits |
| Supply Voltage | Surface Mount | 2.5V ~ 2.7V |
