Micron Technology, Inc. Memory MT46V128M4P-5B:D TR

Description
IC DRAM 512MBIT PARALLEL 66TSOP
Description
IC DRAM 512MBIT PARALLEL 66TSOP

Suppliers

Company
Product
Description
Supplier Links
IC DRAM 512MBIT PARALLEL 66TSOP

IC DRAM 512MBIT PARALLEL 66TSOP

Supplier's Site
Memory - MT46V128M4P-5B:D TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR Memory IC 512Mbit Parallel 200 MHz 700 ps 66-TSOP

SDRAM - DDR Memory IC 512Mbit Parallel 200 MHz 700 ps 66-TSOP

Buy Now

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number MT46V128M4P-5B:D TR MT46V128M4P-5B:D TR
Product Name Memory Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip
Access Time 0.7000 ns 0.7000 ns
Density 512000 kbits 512000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS8S128K32 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SRAM; SRAM Chip
Access Time 15 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Flash Memory - 1882749P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Density 2048000 kbits
Package Type SOIC; SOIC
View Details
Memories - Radiation hardened and high-reliability memories - Space Memories - 5962R1821404VXF - 5962R1821404VXF - Infineon Technologies AG
Specs
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 144000 kbits
Number of Words 4 k
View Details
DIP Memory IC and Storage Component - 2020-NM27C010N200 - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category EPROM; Non-Volatile
Access Time 200 ns
Operating Temperature 0 to 70 C (32 to 158 F)
View Details
2 suppliers