Micron Technology, Inc. Memory MT46H128M32L2MC-5 WT:B TR

Description
IC DRAM 4GBIT PARALLEL 240WFBGA
Datasheet
Description
IC DRAM 4GBIT PARALLEL 240WFBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
IC DRAM 4GBIT PARALLEL 240WFBGA

IC DRAM 4GBIT PARALLEL 240WFBGA

Supplier's Site Datasheet
SDRAM - Mobile LPDDR Memory IC 4Gbit Parallel 200 MHz 5 ns 240-WFBGA (14x14)

SDRAM - Mobile LPDDR Memory IC 4Gbit Parallel 200 MHz 5 ns 240-WFBGA (14x14)

Buy Now Datasheet

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number MT46H128M32L2MC-5 WT:B TR MT46H128M32L2MC-5 WT:B TR
Product Name Memory Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip
Access Time 5 ns 5 ns
Density 4000000 kbits 4000000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 24LC16T-I/SL - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EEPROM; EEPROM
Access Time 3.50E6 ns
Density 16 kbits
View Details
Memory - 28456781 A - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers
Memory - MT5C1008 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SRAM; SRAM Chip
Access Time 12 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
TEXAS INSTRUMENTS CC2510F16RSP IC, TRX, 2.4GHZ, 16K FLASH, QFN36 - 815-CC2510F16RSP - Utmel Electronic Limited
Specs
Memory Category Flash
Logic Family CMOS
Operating Temperature -40 to 85 C (-40 to 185 F)
View Details