Lingto Electronic Limited Datasheets for DRAM and SDRAM Memory Chips
Dynamic random access memory (DRAM) chips are single-transistor memory cells that use small capacitors to store each bit of memory in an addressable format that consists of rows and columns. Because capacitors are unable to hold a charge indefinitely, DRAM memory chips require a near-constant pulse of current to retain stored information.
DRAM and SDRAM Memory Chips: Learn more
| Product Name | Notes |
|---|---|
| IC DRAM 128MBIT PAR 54TSOP II | |
| IC DRAM 128MBIT PAR 86TSOP II | |
| IC DRAM 128MBIT PARALLEL 54TFBGA | |
| IC DRAM 128MBIT PARALLEL 90TFBGA | |
| IC DRAM 1GBIT PARALLEL 134TFBGA | |
| IC DRAM 1GBIT PARALLEL 168VFBGA | |
| IC DRAM 1GBIT PARALLEL 60TWBGA | |
| IC DRAM 1GBIT PARALLEL 84TWBGA | |
| IC DRAM 1GBIT PARALLEL 96TWBGA | |
| IC DRAM 256MBIT PAR 54TSOP II | |
| IC DRAM 256MBIT PAR 66TSOP II | |
| IC DRAM 256MBIT PAR 86TSOP II | |
| IC DRAM 256MBIT PARALLEL 54TFBGA | |
| IC DRAM 256MBIT PARALLEL 60TFBGA | |
| IC DRAM 256MBIT PARALLEL 84TWBGA | |
| IC DRAM 256MBIT PARALLEL 90TFBGA | |
| IC DRAM 2GBIT PARALLEL 84LFBGA | |
| IC DRAM 2GBIT PARALLEL 84TWBGA | |
| IC DRAM 2GBIT PARALLEL 96TWBGA | |
| IC DRAM 4GBIT PARALLEL 96TWBGA | |
| IC DRAM 512MBIT PAR 54TSOP II | |
| IC DRAM 512MBIT PAR 66TSOP II | |
| IC DRAM 512MBIT PARALLEL 54TFBGA | |
| IC DRAM 512MBIT PARALLEL 54WBGA | |
| IC DRAM 512MBIT PARALLEL 60TFBGA | |
| IC DRAM 512MBIT PARALLEL 84TWBGA | |
| IC DRAM 512MBIT PARALLEL 90TFBGA | |
| IC DRAM 64MBIT PAR 50TSOP II | |
| IC DRAM 64MBIT PAR 54TSOP II | |
| IC DRAM 64MBIT PAR 86TSOP II | |
| IC DRAM 64MBIT PARALLEL 54TFBGA | |
| IC DRAM 64MBIT PARALLEL 90TFBGA | |
| IC DRAM 8GBIT PARALLEL 96LFBGA | |
| IC DRAM 8GBIT PARALLEL 96LWBGA | |
| IC DRAM |
| << Prev | Next >> |