Category: Integrated Circuits (ICs) - Memory - Memory
Temperature Range - Operating: -40°C ~ 85°C (TA)
Fake Threat In the Open Market: 57 pct.
MSL Level: 3 (168 Hours)
Mfr: Micron Technology Inc.
Package: Tape & Reel
Product Status: Active
Package / Case: 60-VFBGA
Supplier Device Package: 60-VFBGA (8x9)
Base Product Number: MT46H32M16
Technology: SDRAM - Mobile LPDDR
Mounting Type: Surface Mount
HTSUS: 8542.32.0036
REACH Status: REACH Unaffected
ECCN: EAR99
Voltage - Supply: 1.7V ~ 1.95V
Memory Type: Volatile
Memory Format: DRAM
Memory Size: 512Mbit
Memory Organization: 32M x 16
Memory Interface: Parallel
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5 ns
SDRAM - Mobile LPDDR Memory IC 512Mb (32M x 16) Parallel 200MHz 5ns 60-VFBGA (8x9)
SDRAM - Mobile LPDDR Memory IC 512Mb (32M x 16) Parallel 200MHz 5ns 60-VFBGA (8x9)
SDRAM - Mobile LPDDR Memory IC 512Mb (32M x 16) Parallel 200MHz 5ns 60-VFBGA (8x9)
IC DRAM 512MBIT PAR 60VFBGA Product overview: MT46H32M16LFBF-5 IT:C TR from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT46H32M16LFBF-5
IC DRAM 512MBIT PARALLEL 60VFBGA
VFBGA-60(8x9) DDR SDRAM ROHS
SDRAM - Mobile LPDDR Memory IC 512Mbit Parallel 200 MHz 5 ns 60-VFBGA (8x9)
IC DRAM 512MBIT PAR 60VFBGA
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Lingto Electronic Limited | LCSC Electronics Technology (HK) Limited | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 557-1904-2-ND | 774-MT46H32M16LFBF-5 IT:C TR | MT46H32M16LFBF-5 IT:C TR | MT46H32M16LFBF-5 IT:C TR | MT46H32M16LFBF-5 IT:C TR | MT46H32M16LFBF-5 IT:C TR | |
| Product Name | Integrated Circuits (ICs) - Memory - Memory | Memory | Memory IC and Storage Component | Memory | Memory >> DDR SDRAM | Memory | Integrated Circuits (ICs) - Memory - Memory |
| Memory Category | Volatile; DRAM Chip | DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip |
| Access Time | 5 ns | 5 ns | 5 ns | 5 ns | |||
| Cycle Time | 15 ns | 15 ns | 15 ns | ||||
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | |||
| Supply Voltage | 1.7V ~ 1.95V | 1.7V ~ 1.95V | 1.7V ~ 1.95V | 1.7V ~ 1.95V | Surface Mount |
